Improved performance of laterally oxidized GaInP/AlGaInP lasers by thermal annealing

Floyd, Philip D.; Treat, D.W.

doi:10.1063/1.118900

Cited by 6 publications

(4 citation statements)

References 12 publications

(8 reference statements)

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“…The considerable improvement in PL intensity and reduction in FWHM with the enhancement in the threshold current I th can be related to the reduction in deep-level traps and oxygen-related defects due to the elevated temperature as explained in Ref. 9. However, the improvement we are getting in this work is higher than reported.…”

Section: Wavelength (Nm)contrasting

confidence: 56%

“…Floyd et al performed annealing after capping the top surface by SiO 2 film deposited using plasmaenhanced chemical vapor deposition, and limited the annealing temperature to 400°C, and obtained an improvement in threshold current I th , from 20 to 18 mA. 9 A similar procedure was performed; the annealing temperature was set to 450°C for 30 min. Improvement in the threshold current was observed for ridge lasers from 33 to 25 mA.…”

Section: Introductionmentioning

confidence: 99%

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Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

Al-Jabr¹,

Mishra²,

Majid³

et al. 2016

J. Nanophoton

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Abstract. We achieved considerable laser diode (LD) improvement after annealing InGaP/ InAlGaP laser structure at 950°C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from ∼30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (I th ), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (η i ), from 63% to 68%, and increased internal losses α i , from 14.3 to 18.6 cm −1 . Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Wavelength (Nm)contrasting

confidence: 56%

Section: Introductionmentioning

confidence: 99%

Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

Al-Jabr¹,

Mishra²,

Majid³

et al. 2016

J. Nanophoton

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“…The third process is the reduction of deep-level traps. The improvement in PL intensity and reduction in FWHM, in conjunction with the enhancement in threshold current Ith can be related to the reduction in deeplevel traps or oxygen-related DX centers [22].…”

Section: Discussionmentioning

confidence: 99%

Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing

Al-Jabr

Majid

Shen

et al. 2016

Semiconductor Lasers and Laser Dynamics VII

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Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing ", Proc. SPIE 9892, Semiconductor Lasers and Laser Dynamics VII, ABSTRACTWe increased the Al content in the single quantum well InGaP/InAlGaP laser by strain-induced quantum well intermixing, and obtained a considerable enhancement (close to ten-fold increase) in the photoluminescence (PL) intensity. Among the annealing process investigated, we achieved lasing at 638 nm in conjunction with reduction in the lasing threshold current by close to 500 mA in a moderately intermixed laser. Lasing in orange color, as well as spontaneous emission in the yellow and green color regime, were also achieved by extending the annealing conditions. The significance of the current work became apparent when one considers that achieving these tunable wavelengths by increasing the Al content in quantum wells during epitaxy growth leads to severe lattice-mismatch and poor material quality. Hence, our Al "drive-in" intermixing process is a viable approach for forming Al-rich InAlGaP quantum well, which is essential for realizing efficient optoelectronic devices in the "green-yellow-orange gap". Downloaded From: http://proceedings.spiedigitallibrary.org/ on 08/08/2016 Terms of Use: http://spiedigitallibrary.org/ss/termsofuse.aspx Proc. of SPIE Vol. 9892 98921B-2 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 08/08/2016 Terms of Use: http://spiedigitallibrary.org/ss/termsofuse.aspx Proc. of SPIE Vol. 9892 98921B-9 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 08/08/2016 Terms of Use: http://spiedigitallibrary.org/ss/termsofuse.aspx

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“…The wet oxidation process induces the formation of interface oxide traps, whose trap density has been investigated by a capacitance technique [9] . Post-oxidation annealing in a nitrogen environment at high temperatures can reduce the interface trap density and improve the characteristics of the device [10] . This kind of post-oxidation annealing can benefit oxide-defined VCSEL fabrication to improve the lasing performances.…”

mentioning

confidence: 99%

Improvement of InGaAs/GaAs vertical-cavity surface-emitting lasers by post-oxidation annealing

Yan¹,

Deng²,

Li³

et al. 2012

中国光学快报

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InGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) are fabricated by a thermal selective wetoxidation confinement technique. Post-oxidation annealing in a nitrogen environment at high temperatures is then conducted to improve the performance of the oxide-confined InGaAs/GaAs VCSELs. The optimum post-oxidation annealing conditions are determined by changing the furnace temperature and annealing time. Compared with a unannealed laser device, the light output power increases by about 12%. An aging test is carried out to examine the reliability of the annealed oxide-confined VCSEL device. The temperature dependence of the lasing wavelength of the annealed oxide-confined VCSELs is also investigated.

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Improved performance of laterally oxidized GaInP/AlGaInP lasers by thermal annealing

Cited by 6 publications

References 12 publications

Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing

Improvement of InGaAs/GaAs vertical-cavity surface-emitting lasers by post-oxidation annealing

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