Abstract:Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing ", Proc. SPIE 9892, Semiconductor Lasers and Laser Dynamics VII, ABSTRACTWe increased the Al content in the single quantum well InGaP/InAlGaP laser by strain-induced quantum well intermixing, and obtained a considerable enhancement (close to ten-fold increase) in the photoluminescence (PL) intensity. Among the annealing process investigated, we achieved lasing at 638 nm in conjunction with reduction in the lasin… Show more
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