Improved performance of a junctionless tunnel field effect transistor with a Si and SiGe heterostructure for ultra low power applications

Abstract

In this paper, we present improved device characteristics of a Junctionless Tunnel Field Effect Transistor (JLTFET) with a Si and SiGe heterostructure.

Tunnel FET‐based ultralow‐power and hardware‐secure circuit design considering p‐i‐n forward leakage

“…In recent years, researchers have proposed several TFETs with distinct architectures and materials . Among them, III‐V TFETs attracted wide attention because of their high ON current and lower subthreshold swing values .…”

“…In recent years, researchers have proposed several TFETs with distinct architectures and materials. [5][6][7][8] Among them, III-V TFETs attracted wide attention because of their high ON current and lower subthreshold swing values. 7,8 In this work, a universal analytical double-gate InAs TFET Verilog-A model with channel length L = 20 nm has been explored for TFET circuit design.…”

“…TFET exhibits steep subthreshold slope, enabling higher ON to OFF current ratios due to its band‐to‐band tunneling mechanism . In the recent past, numerous TFET device architectures have been proposed to obtain high ON current with sub‐60‐mV/dec switching operation . Among them, silicon TFETs have been proved to be desirable because of their matured fabrication process but exhibit lower ON current .…”

“…3,4 In the recent past, numerous TFET device architectures have been proposed to obtain high ON current with sub-60-mV/dec switching operation. [5][6][7][8] Among them, silicon TFETs have been proved to be desirable because of their matured fabrication process but exhibit lower ON current. 5,6 The researcher's investigation revealed that III-V TFETs achieve higher ON current because of the smaller bandgap of the material used.…”

“…[5][6][7][8] Among them, silicon TFETs have been proved to be desirable because of their matured fabrication process but exhibit lower ON current. 5,6 The researcher's investigation revealed that III-V TFETs achieve higher ON current because of the smaller bandgap of the material used. 7,8 In recent experimental demonstration, III-V TFET has achieved ON current of 92 μA/μm with 48-mV/dec subthreshold swing 9 at a supply voltage (V DD ) of 0.5 V. With high ON to OFF current ratio and lower subthreshold swing, TFET digital circuits achieve ultralow power consumption and high energy efficiency.…”