electron injection or extraction, whereas a high work function metal such as Au is employed for hole injection or extraction. Since the low work function metallic electrodes are normally chemically reactive, they are readily oxidized in air (oxygen) and water when serving as cathodes. Airstable electrodes with a low work function are more challenging compared to ones with a high work function. Figure 1 shows the physics of band bending when a metal electrode is in contact with an n-type semiconductor to illustrate the importance of a low work function for the electrode. When the work function (WF = E vac − E F ) of the metal electrode is larger than that of the n-type semiconductor, electron flows from the semiconductor to the metal electrode. Unfavorable band bending for electron collection is formed at the interface in this case. By contrast, if the work function of the metal electrode is lower than that of the n-type semiconductor (Figure 1b), the opposite band bending is formed to favor electron collection from the semiconductor to the electrode. Therefore, an electrode with a sufficiently low work function is crucial to efficient electron injection or collection. Surface modification has been shown to be effective in reducing the work function of the electrodes to facilitate electron injection and collection, [7] and enhanced electron collection or injection improves the performance of organic electron devices. The proper surface modification strategy can produce air-stable electron collection or injection electrodes combined with high work function electrode/surface modifiers. This approach also enables diverse design of novel-device architectures for flexible electronics and printed electronics.Several types of low work function surface modifiers have been developed for the cathode interface. Inorganic metal oxides and alkali metal salts are effective low work function modifiers. N-type metal oxides such as titanium oxide (TiO x ) [8] and zinc oxide (ZnO) [9] are often used as cathode interlayers due to the excellent charge mobility and electron selectivity. The metal oxide film with a typical thickness of more than 10 nm possesses a low work function when coating on a high work function electrode and high-temperature annealing is normally required. Alkali metal salts like LiF, [10] Cs 2 CO 3 , [11] and Li 2 CO 3 [12] can also be incorporated into the cathode interlayer to reduce the electrode work function. Considering the intrinsic insulating properties, the thickness must be carefully controlled to ensure efficient electron extraction and injection. Another example is organic molecules grafted with ionic or polar Interfaces with a low work function are crucial to electron injection and collection in semiconducting devices such as diodes and transistors, and many types of surface modifiers have been developed to tailor the work functions of electronic devices. In this review, the basic and working mechanisms of low work function surface modifiers covering the surface dipole, low intrinsic bulk work funct...