Improved medium voltage AC-DC rectifier based on 10kV SiC MOSFET for Solid State Transformer (SST) application

Zhu, Qianlai; Wang, Li; Zhang, Liqi; Yu, Wensong; Huang, Alex Q.

doi:10.1109/apec.2016.7468196

Cited by 16 publications

(9 citation statements)

References 11 publications

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“…SiC MOSFETs with fast switching speed enables the realization of MV MF transformation. However, due to the significant amount of energy store in the output capacitance, even with zero load current, hard turn-on loss is still high enough to limit the operation frequency below 10 kHz [13], [28]. To increase the switching frequency and conversion efficiency, full ZVS DC-DC converter is therefore required.…”

Section: B Dc-dc Applicationsmentioning

confidence: 99%

“…This overall lower switching loss enables higher switching frequency in MV converters under hard switching conditions, leading to smaller system volume and higher power density. Hard switching based AC-DC converter based the 15 kV MOSFET has been reported in [28] which has a switching frequency of 6 kHz and a DC link voltage of 6 kV.…”

Section: B Switching Loss Modelmentioning

confidence: 99%

“…The integrated silicon diode in Fig. 9(a) may experience an abnormal avalanche breakdown in every switching cycle and the circuit has potential shoot-through problem [28]. An improved AC-DC as shown in Fig.…”

Section: A Ac-dc Applicationsmentioning

confidence: 99%

“…An improved AC-DC as shown in Fig. 9(b) is presented in [28] to solve the shoot-through and avalanche of silicon diode problems. In the improved topology, the SiC MOSFET body diode never conducts and there is no shoot through problem that threatens the safe operation of the circuit.…”

Section: A Ac-dc Applicationsmentioning

confidence: 99%

“…The AC-DC stage of the Type D SST normally operates under hard switching condition, which limits the switching frequency under 10 kHz due to the large amount of switching losses even if SiC MOSFET is used [13], [28]. While in the DC-DC stage, ZVS can be easily achieved and it enables a substantial reduction of the switching loss.…”

Section: Introductionmentioning

confidence: 99%

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15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers

et al. 2017

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Abstract-Due to much higher achievable blocking voltage and faster switching speed, power devices based on wide bandgap (WBG) silicon carbide (SiC) material are ideal for medium voltage (MV) power electronics applications. For example, a 15 kV SiC MOSFET allows a simple and efficient two-level converter configuration for a 7.2 kV solid state transformer (SST) for smart grid applications. Compared with multilevel input series and output parallel (ISOP) solution, this approach offers higher efficiency and reliability, reduced system weight and cost by operating at medium to high switching frequency. However, the main concern is how to precisely implement this device in different MV applications, achieving highest switching frequency while maintaining good thermal performance. This paper reviews the characteristics of 15 kV SiC MOSFET and offers a comprehensive guideline of implementing this device in practical MV power conversion scenarios such as AC-DC, DC-DC and AC-AC in terms of topology selection, loss optimization and thermal management.Index Terms-15 kV SiC MOSFET, efficiency, medium voltage, medium voltage power electronics, reliability, solid state transformer, smart transformer.

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Section: B Dc-dc Applicationsmentioning

confidence: 99%

Section: B Switching Loss Modelmentioning

confidence: 99%

Section: A Ac-dc Applicationsmentioning

confidence: 99%

Section: A Ac-dc Applicationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers

et al. 2017

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A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability

Kong,

Duan,

Zhang

et al. 2023

IET Power Electronics

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A novel 1440‐V 4H‐SiC accumulation mode MOSFET (ACCUFET) with ultra‐low specific on‐resistance and improved reverse recovery performance is proposed in this article. As for the proposed SiC ACCUFET, the channel region can be completely depleted by the P‐type heavily doped polysilicon gate to build an electron barrier and realize a normally‐off device. And a Schottky barrier diode (SBD) is integrated below the trench gates on both sides, which brings the feasibility of realizing reverse conduction function of the proposed ACCUFET. Also, the p‐shield regions under the Schottky contact metal provide a good electric field shielding effect for the gate oxide. Compared with the conventional SiC trench MOSFET, the numerical simulation results show that the specific on‐resistance (Ron,sp) of the proposed ACCUFET is reduced by more than 64%. The high‐frequency figures‐of‐merit HFOM [Ron,sp × Cgd] and HFOM [Ron,sp × Qgd] of the proposed device are improved by 53.19% and 58.74%, respectively. The reverse recovery time (trr), and reverse recovery charge (Qrr) are reduced by 23.28% and 82.73%, respectively. In addition, the results also indicate that the proposed device has a better latch‐up immunity compared with the conventional SiC trench MOSFET. The excellent device performance and the simple manufacturing process provide a good prospect for the application of the proposed device.

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A trench/planar SiC MOSFET integrated with SBD (TPSBD) for low reverse recovery charge and low switching loss

Han¹,

Bai²,

Chen³

et al. 2020

Semicond. Sci. Technol.

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In this paper, with Sentaurus TCAD simulation, the trench/planar MOSFET (TPMOS) shows a much lower electric field in gate oxide and a smaller gate charge than the traditional trench MOSFET (TMOS) and commercial double trench MOSFET (DTMOS). Besides, compared with DTMOS, the TPMOS also has a smaller specific on-resistance. These advantages make the TPMOS more suitable for being integrated with a Schottky barrier diode (SBD) to reduce both conduction loss and switching loss. Therefore, the trench/planar 4 H-SiC MOSFET integrated with SBD (TPSBD) is firstly proposed and studied. For the TPSBD, the static simulation results show that the maximum reverse current without the body diode turning on is 1320 A cm −2 in the third quadrant. In the double pulse test with a load current of 1000 A cm −2 , the body diode of the TPSBD is successfully suppressed. However, the body diodes of the other three MOSFETs turn on and contribute 75% of the freewheeling currents, even though an external SBD is anti-parallel with these MOSFETs. The body diodes still contribute 25% of the freewheeling currents, even though the active area of the anti-parallel SBD increases three times. Compared with TMOS, DTMOS and TPMOS, the reverse recovery charge of the TPSBD reduces by 91%, 88% and 96%, respectively. The total switching loss of the TPSBD also reduces by 83%, 71% and 66% in contrast with TMOS, DTMOS and TPMOS, respectively. Therefore, the TPSBD is a superior choice for low reverse recovery charge and low switching loss application.

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Improved medium voltage AC-DC rectifier based on 10kV SiC MOSFET for Solid State Transformer (SST) application

Cited by 16 publications

References 11 publications

15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers

15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers

A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability

A trench/planar SiC MOSFET integrated with SBD (TPSBD) for low reverse recovery charge and low switching loss

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