Improved low frequency noise characteristics of sub-micron MOSFETs with TaSiN/TiN gate on ALD HfO2 dielectric

Devireddy, Siva Prasad; Min, Bigang; Çelik‐Butler, Zeynep; Tseng, Hsing Huang; Tobin, Philip J.; Zlotnicka, A.

doi:10.1016/j.microrel.2007.05.006

Cited by 12 publications

(9 citation statements)

References 27 publications

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“…The corresponding N ot averaged over the wafer and the device area is summarized in Table I, showing average oxide trap densities in line with previous results [9], [15], [18], [20], [21], [29], [30]. It is evident from the extracted N ot 's in Table I that the major factor impacting the 1/f noise is the nature and thickness of the interfacial oxide (chemical versus thermal oxidation), while the HfO 2 thickness and the metal gate fill have only a marginal impact.…”

Section: Resultssupporting

confidence: 88%

On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise

Simoen

Veloso

Higuchi³

et al. 2013

IEEE Trans. Electron Devices

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The low-frequency noise behavior of replacement metal gate high-k/metal-gate MOSFETs with an equivalent oxide thickness of the SiO 2 /HfO 2 bilayer in the range ∼1 nm has been investigated. It will be shown that both the average trap density and its profile derived from the frequency exponent γ of the flicker noise spectra are mainly determined by the interfacial layer (IL) oxide processing, with a higher trap density corresponding with a thinner chemical oxide, compared with a ≤1-nm thermal SiO 2 IL. The thickness of the HfO 2 layer and the metal gate fill has only a marginal impact on the noise power spectral density. It will also be shown that for the extraction of the trap density profiles from the 1/f γ noise spectra accurate values for the tunneling effective mass and barrier height are required.Index Terms-Flicker noise, high-k (HK) gate dielectrics, low-frequency (LF) noise, oxide trap density, tunneling.

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Section: Resultssupporting

confidence: 88%

On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise

Simoen

Veloso

Higuchi³

et al. 2013

IEEE Trans. Electron Devices

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“…Similar or higher values of the effective trap density within the range of (10 18 –10 20 ) eV −1 cm −3 were found in the majority of publications on Si MOSFETs with a high-k dielectric (see References [ 26 , 27 , 28 , 29 , 30 , 31 ]). We are aware of only one study of noise in high-k Si MOSFET that reported a very small trap density of N t ≅ 10 17 eV −1 cm −3 [ 31 ]. Other studies of noise in AlGaN/GaN HEMTs with metal gate indicated N t = (10 18 –10 20 ) eV −1 cm −3 (see Figure 7 b and References [ 23 , 24 , 25 , 32 ]).…”

Section: Resultssupporting

confidence: 74%

“…At high gate voltage, the trap density is close to 10 19 eV −1 cm −3 . Similar or higher values of the effective trap density within the range of (10 18 -10 20 ) eV −1 cm −3 were found in the majority of publications on Si MOSFETs with a high-k dielectric (see References [26][27][28][29][30][31]). We are aware of only one study of noise in high-k Si MOSFET that reported a very small trap density of N t 10 17 eV −1 cm −3 [31].…”

Section: Resultssupporting

confidence: 74%

“…Figure 7 b compares the effective trap density as a function of the gate voltage swing extracted using Equation (4) for the same transistors as in Figure 7 a. The right panel indicates the ranges of the trap densities published for Si MOSFETs with high-k dielectric and for similar AlGaN/GaN transistors with the metal Schottky gate [ 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 ].…”

Section: Resultsmentioning

confidence: 99%

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Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

et al. 2020

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Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barrier heights for this kind of Schottky diode were found to be relatively high, varying within the range of φb = (1.0–1.26) eV. AlGaN/GaN fin-shaped field-effect transistors (finFETs) with a graphene gate were fabricated and studied. These devices demonstrated ~8 order of magnitude on/off ratio, subthreshold slope of ~1.3, and low subthreshold current in the sub-picoamperes range. The effective trap density responsible for the 1/f low-frequency noise was found within the range of (1–5) · 1019 eV−1 cm−3. These values are of the same order of magnitude as reported earlier and in AlGaN/GaN transistors with Ni/Au Schottky gate studied as a reference in the current study. A good quality of graphene/AlGaN Schottky barrier diodes and AlGaN/GaN transistors opens the way for transparent GaN-based electronics and GaN-based devices exploring vertical electron transport in graphene.

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“…where β is proportional to the trap density but independent on |V GS |, N is the carrier density in the channel, α is the scattering coe cient and µ is the carrier defective mobility 21 . And, κ = R C /R T , R t is the tunneling junction resistor, R c is the channel resistor, the pre-factor [1/(1 + κ)]2(τ r 2 /τ t ) = 5 × 10 − 5 Hz − 1 , pre-factor [κ /(1 + κ)] 2 (β/A)[1/N + αµ] 2 = 9 × 10 − 9 are assumed to be a constant 22 .…”

Section: Resultsmentioning

confidence: 99%

Effect of High-Pressure D2 and H2 Annealing on LFN Properties in FD-SOI pTFET

Shin

Eadi

Song

et al. 2022

Preprint

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The effect of high-pressure deuterium annealing and hydrogen annealing on the electrical performance and the low-frequency noise properties in fully-depleted silicon-on-insulator p–type tunneling field-effect transistor (pTFET) was investigated. The electrical performance and the low-frequency noise properties were improved by high-pressure deuterium annealing. The typical noise power spectral density without high-pressure annealing exhibited two Lorentzian spectra, which were affected by one fast trap site and one slow trap site. The interface trap density related to the fast trap sites was reduced by using high-pressure deuterium and hydrogen annealing. Because the traps near the tunneling junction that contributed to the LFN were passivated using high-pressure deuterium and hydrogen annealing, high-pressure H2 and D2 annealing have the potential to be significant and necessary for future integrated tunneling field-effect transistor technology.

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Improved low frequency noise characteristics of sub-micron MOSFETs with TaSiN/TiN gate on ALD HfO2 dielectric

Cited by 12 publications

References 27 publications

On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise

On the Oxide Trap Density and Profiles of 1-nm EOT Metal-Gate Last CMOS Transistors Assessed by Low-Frequency Noise

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures

Effect of High-Pressure D2 and H2 Annealing on LFN Properties in FD-SOI pTFET

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