Improved IR detectors to swap heavy systems for SWaP

Manissadjian, Alain; Rubaldo, L.; Rebeil, Yann; Kerlain, A.; Brellier, D.; Mollard, L.

doi:10.1117/12.921879

Cited by 24 publications

(17 citation statements)

References 3 publications

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“…At a temperature of 150K, the dark current of the nBp device is equal to 1.5 x 10 -4 A/cm 2 which is lower by a factor of 2.6 than the pin photodiode. This value is within two decades compared to values from the well-known 'rule 07' [33] showing the difficulties of the T2SL technology to reach similar dark-current performances than Mercury Cadmium Telluride (MCT or HgCdTe) detectors in the MWIR domain. This is directly attributable to the short minority carrier lifetime in the T2SL material.…”

Section: -Dark-current Performance Of Mwir T2sl Nbp Devicementioning

confidence: 76%

“…On the other hand, as expected, the LWIR nBp device is limited by the diffusion current up to -0.3 V with a flat dark-current level of 3.5 x 10 -4 A/cm 2 which is more than one order of magnitude lower compared to the performance of the pin photodiode. This result is at the state of the art compared to the well-known MCT 'rule 07' [33] demonstrating that InAs/GaSb SL detectors can be a serious competitor to the MCT technology at longer wavelength. This can be explained by the fact that even though the minority carrier lifetime in the T2SL material is lower than in the MCT, the × product is maximum for a lower doping level in the MCT [26].…”

Section: -Nbp Structure For the Long-ir Spectral Domainmentioning

confidence: 85%

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Design of InAs/GaSb superlattice infrared barrier detectors

Delmas

Rossignol

Rodriguez

et al. 2017

Superlattices and Microstructures

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Design of InAs/GaSb type-II superlattice (T2SL) infrared barrier detectors is theoretically investigated.Each part of the barrier structures is studied in order to achieve optimal device operation at 150K and 77K, in the midwave and longwave infrared domain, respectively. Whatever the spectral domain, nBp structure with a p-type absorbing zone and an n-type contact layer is found to be the most favourable detector architecture allowing a reduction of the dark-current associated with generation-recombination processes. The nBp structures are then compared to pin photodiodes. The MWIR nBp detector with 5 µm cut-off wavelength can operate up to 120K, resulting in an improvement of 20K on the operating temperature compared to the pin device. The dark-current density of the LWIR nBp device at 77K is expected to be as low as 3.5 x 10 -4 A/cm 2 at 50 mV reverse bias, more than one decade lower than the usual T2SL photodiode. This result, for a device having cut-off wavelength at 12 µm, is at the state of the art compared to the well-known MCT 'rule 07'. Highlights :1-InAs/GaSb type-II superlattice barier detectors have been designed for the MWIR and for the LWIR 2-MWIR nBp T2SL detector can operate up to 120K 3-LWIR nBp T2SL detector can compete with well established MCT technology.

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Section: -Dark-current Performance Of Mwir T2sl Nbp Devicementioning

confidence: 76%

Section: -Nbp Structure For the Long-ir Spectral Domainmentioning

confidence: 85%

Design of InAs/GaSb superlattice infrared barrier detectors

Delmas

Rossignol

Rodriguez

et al. 2017

Superlattices and Microstructures

View full text Add to dashboard Cite

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“…This property tends to prevent unbiasing effects; consequently FPAs format can be increased. In addition, minority carriers (holes) lifetime and mobility in the n-type base layer lead to lower dark currents hence allowing higher operating temperatures [8] or low flux detection [9]. This major advantage is particularly interesting in the scope IR detection for space, to lower the electrical power needed by cryocooling systems or for the detection of weak IR sources, in a wide range of spectral bands.…”

Section: Ar Coatingmentioning

confidence: 98%

Low-dark current p-on-n MCT detector in long and very long-wavelength infrared

et al. 2015

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This paper presents recent developments done at CEA-LETI Infrared Laboratory on processing and characterization of p-on-n HgCdTe (MCT) planar infrared focal plane arrays (FPAs) in LWIR and VLWIR spectral bands. These FPAs have been grown using liquid phase epitaxy (LPE) on a lattice matched CdZnTe substrate. This technology presents lower dark current and lower serial resistance in comparison with n-on-p vacancy doped architecture and is well adapted for low flux detection or high operating temperature. This architecture has been evaluated for space applications in LWIR and VLWIR spectral bands with cutoff wavelengths from 10µm up to 17µm at 78K. Innovations have been introduced to the technological process to form a heterojunction with a LPE growth technique. The aim was to lower dark current at low temperature, by decreasing currents from the depletion region. Electro-optical characterizations on p-on-n photodiodes have been performed on QVGA format FPAs with 30µm pixel pitches. Results show excellent operabilities in current and responsivity, with low dispersion and noise limited by current shotnoise. Studies performed on dark current show that dark current densities are consistent with the heuristic prediction law "Rule07" at 78K. Below this temperature, dark current varies as a pure diffusion current.

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“…Infrared detectors that are optimized for the mid‐wave (MWIR, 3−5 μm) range and that meet both the high operating temperature (HOT; T ) ≥200 K and size, weight, and power (SWaP) conditions are essential in many applications . SWaP conditions lead to the reduction of the cooling requirements that can be reached by four‐, three‐, and two‐stage thermoelectrical (TE) cooling.…”

Section: Introductionmentioning

confidence: 99%

A Thermoelectrically Cooled nBn Type‐II Superlattices InAs/InAsSb/B‐AlAsSb Mid‐Wave Infrared Detector

Martyniuk

Michalczewski

Tsai

et al. 2020

Physica Status Solidi (a)

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Herein, an nBn barrier mid‐wave infrared InAs/InAsSb (xSb = 0.4) type‐II superlattice (T2SL) detector operating in the thermoelectrical (TE) cooling condition is reported. AlAsSb (Sb‐composition, xSb ≥ 0.975) is shown not to introduce an additional barrier in the valence band in the analyzed temperature range (≥200 K) reached by four‐stage TE cooling in nBn barrier architectures with a T2SL InAs/InAsSb active layer. The dark current and photocurrent produced are analyzed in relation to the barrier and contact layer doping, with the Sb composition of the barrier indicating the optimal architecture. The results of the simulation are compared with the experimental results of the HgCdTe and InAsSb nBn barrier detectors. A detectivity of ≈1010 cmHz1/2 W−1 at 200 K is reported without an immersion lens (≈1011 cmHz1/2 W−1 is reported for an immersed detector).

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Improved IR detectors to swap heavy systems for SWaP

Cited by 24 publications

References 3 publications

Design of InAs/GaSb superlattice infrared barrier detectors

Design of InAs/GaSb superlattice infrared barrier detectors

Low-dark current p-on-n MCT detector in long and very long-wavelength infrared

A Thermoelectrically Cooled nBn Type‐II Superlattices InAs/InAsSb/B‐AlAsSb Mid‐Wave Infrared Detector

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