Improved InGaN/GaN quantum wells on treated GaN template with a Ga‐rich GaN interlayer

Abstract

Treated GaN template was achieved by in situ droplet epitaxy of a Ga-rich GaN interlayer on the conventional GaN template. InGaN/GaN quantum wells (QWs) were grown on the conventional and treated GaN templates under the same growth conditions and then comprehensively characterized. The indium homogeneity in the InGaN layers and the interface sharpness between InGaN and GaN layers of the InGaN/GaN QWs on the treated GaN template were significantly improved. The emission intensity from the InGaN/GaN QWs on the treated GaN template was enhanced by 20% than that on the conventional GaN template, which was attributed to the strain reduction and the improvement in crystalline quality.

InGaN/GaN quantum well improved byin situSiNxpretreatment of GaN template

“…For instance, modification in surface Ga coverage was used to improve initial GaN island shaping . A low‐temperature (LT) GaN interlayer between high‐temperature (HT) GaN layers was employed to improve surface/interface quality of GaN template , and thus enhance luminescence properties of the subsequently grown InGaN/GaN QWs . An indium posttreatment of InGaN epilayers was employed for selective etching of InGaN epilayers around threading dislocations, leading to a significant increase of light emission efficiency .…”