Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment

Wu, Zhengyuan; Shen, Xiaoying; Xiong, Hong; Li, Qingfei; Kang, Junyong; Fang, Zhaoxi; Lin, Feng Yi; Yang, Bilan; Lin, Shilin; Shen, Wei; Zhang, Tong‐Yi

doi:10.1007/s00339-016-9661-2

Cited by 6 publications

(2 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Our finding here is inline with the recent experimental studies focussing on this aspect. 55,60,61 Our calculations confirm and support the recent experimental arguments that understanding and tailoring the QW barrier interface in terms of roughness plays an impor-tant role for the electronic and optical properties of these systems. Furthermore, our argument that the interface roughness plays a key role for optical properties of these systems might also be related to the experimentally reported enhancement of the PL intensity of InGaN/GaN QWs after reduction of the surface roughness via Hydrogen treatment during growth.…”

Section: Comparison With Experiments and Consequencessupporting

confidence: 82%

Interface roughness, carrier localization and wave function overlap in $c$-plane InGaN/GaN quantum wells: Interplay of well width, alloy microstructure, structural inhomogeneities and Coulomb effects

Tanner,

McMahon,

Schulz

2018

Preprint

View full text Add to dashboard Cite

In this work we present a detailed analysis of the interplay of Coulomb effects and different mechanisms that can lead to carrier localization effects in c-plane InGaN/GaN quantum wells. As mechanisms for carrier localization we consider here effects introduced by random alloy fluctuations as well as structural inhomogeneities such as well width fluctuations. Special attention is paid to the impact of the well width on the results. All calculations have been carried out in the framework of atomistic tight-binding theory. Our theoretical investigations show that independent of the here studied well widths, carrier localization effects due to built-in fields, well width fluctuations and random alloy fluctuations dominate over Coulomb effects in terms of charge density redistributions. However, the situation is less clear cut when the well width fluctuations are absent. For large well width (approx. > 2.5 nm) charge density redistributions are possible but the electronic and optical properties are basically dominated by the spatial out-of plane carrier separation originating from the electrostatic built-in field. The situation changes for lower well width (< 2.5 nm) where the Coulomb effect can lead to significant charge density redistributions and thus might compensate a large fraction of the spatial in-plane wave function separation observed in a single-particle picture. Given that this in-plane separation has been regarded as one of the main drivers behind the green gap problem, our calculations indicate that radiative recombination rates might significantly benefit from a reduced quantum well barrier interface roughness.

show abstract

Section: Comparison With Experiments and Consequencessupporting

confidence: 82%

Interface roughness, carrier localization and wave function overlap in $c$-plane InGaN/GaN quantum wells: Interplay of well width, alloy microstructure, structural inhomogeneities and Coulomb effects

Tanner,

McMahon,

Schulz

2018

Preprint

View full text Add to dashboard Cite

show abstract

“…Recently, Liang et al [4] reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD) with an emission wavelength at around 442 nm. In GaN-based blue LDs, InGaN/GaN multi-quantum wells (MQWs) are widely used as active regions and their crystal quality will significantly affect the luminescence quality [5][6][7] and then the laser performance [8]. Scientists have made great efforts to grow InGaN/GaN materials with low defect density and high interface uniformity [9,10].…”

Section: Introductionmentioning

confidence: 99%

Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells

et al. 2022

View full text Add to dashboard Cite

In this work, the photoluminescence (PL) properties of three as-grown InGaN/GaN multiple quantum well (MQW) structures which are heat-treated under different temperatures with nitrogen (N2) atmosphere are investigated. Temperature-dependent photoluminescence (PL) analysis was used to characterize the depth of localized states and defect density formed in MQWs. By fitting the positions of luminescence peaks with an LSE model, we find that deeper localized states are formed in the MQWs after high-temperature treatment. The experimental results show that the luminescence intensity of the sample heat-treated at 880 °C is significantly improved, which may be due to the shielding effect of In clusters on defects. While the luminescence efficiency decreases because of the higher defect density caused by the decomposition of the InGaN QW layer when the sample is heat-treated at 1020 °C. Moreover, the atomic force microscope results show that the increase in heat-treatment temperature leads to an increase in the width of surface steps due to the rearrangement of surface atoms in a high-temperature environment.

show abstract

Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition

et al. 2019

View full text Add to dashboard Cite

InGaN interlayer was grown between GaN layers on sapphire substrate using metal organic chemical vapour deposition. The crystalline quality of the sample was investigated using highresolution X-ray diffraction. The Indium composition and InGaN thickness were determined to be 10-15% and 5-10 nm respectively. Transmission electron microscopy image revealed the interfacial characteristics of InGaN and GaN layers. Raman spectroscopy revealed prominent GaN peak positions with InGaN shoulder peaks. The growth mode of InGaN and GaN were determined as nanoislands with helical-like morphology by atomic force microscopy. Hall measurement showcased improvement in the mobility and bulk concentration for the GaN/InGaN (5nm)/GaN structures.

show abstract

Improved interface quality and luminescence capability of InGaN/GaN quantum wells with Mg pretreatment

Cited by 6 publications

References 40 publications

Interface roughness, carrier localization and wave function overlap in $c$-plane InGaN/GaN quantum wells: Interplay of well width, alloy microstructure, structural inhomogeneities and Coulomb effects

Interface roughness, carrier localization and wave function overlap in $c$-plane InGaN/GaN quantum wells: Interplay of well width, alloy microstructure, structural inhomogeneities and Coulomb effects

Effect of High Temperature Treatment on the Photoluminescence of InGaN Multiple Quantum Wells

Influence of InGaN interlayer thickness on GaN layers grown by metal organic chemical vapour deposition

Contact Info

Product

Resources

About