Improved hydrogen ionization rate in enhanced glow discharge plasma immersion ion implantation by enlarging the interaction path using an insulating tube

Abstract

A small pointed hollow anode and large tabular cathode are used in enhanced glow discharge plasma immersion ion implantation (EGD-PIII). Electrons are repelled from the substrate by the electric field formed by the negative voltage pulses and concentrate in the vicinity of the anode to enhance the self-glow discharge process. To extend the application of EGD-PIII to plasma gases with low ionization rates, an insulating tube is used to increase the interaction path for electrons and neutrals in order to enhance the discharge near the anode. Results obtained from numerical simulation based on the particle-in-cell code, finite element method, and experiments show that this configuration enhances the ionization rate and subsequent ion implant fluence. The process is especially suitable for gases that have low ionization rates such as hydrogen and helium.