Improved high-frequency response of InGaAsP double-channel buried-heterostructure lasers

Valster, A.; Meuleman, L.; Kuindersma, P.I.; Dongen, T. van

doi:10.1049/el:19860011

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Laser Processing1

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1987

1995

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Cited by 16 publications

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“…The presented process requires only one mask step and one evaporation process without contact alloying, in contrast to other published methods to form p-and ncontacts on the same side [3,4], where at least two mask steps and two evaporation steps, followed by contact alloying, are required. We have processed first dovetail DCPBHlasers on η-type substrate (n = 5 · 10 18 cm" 3 ), where we could also metallize the substrate side with Ti/Pt/Au.…”

Section: Laser Processingmentioning

confidence: 99%

See 1 more Smart Citation

Dovetail-DCPBH-Laser for High Bitrates and Monolithic Integration

Wünstel¹,

Luz²,

Gohla³

et al. 1987

Journal of Optical Communications

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Section: Laser Processingmentioning

confidence: 99%

“…Reduction of the capacitance by etching off the side layers or by proton bombardment, as proposed in [3], seems to be a promising way towards improved high frequency behaviour of BH-lasers. Thus, BH-lasers with large parasitic capacitances due to the blocking layers typically exhibit 3 dB cut-off frequencies below 1 GHz.…”

Section: Introductionmentioning

confidence: 99%