Improved GaN-on-Si epitaxial quality by incorporating various SixNy interlayer structures

Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask

“…To mitigate the bulk crystalline defects/dislocations, several buffer structural designs have been employed such as the graded/stepped AlGaN layer configurations [11][12][13], AlN/GaN or AlGaN/GaN superlattices (SL) [14][15][16], epitaxial lateral overgrowth (ELOG) technique [17], and the three-dimensional (3D)-to-two-dimensional (2D) growth mode [18,19]. Especially, inserting a SiN x nano-mask into the matrix of GaN layer to promote the growth mode transition in Coatings 2021, 11, 16 2 of 10 GaN from 3D island-like overgrowth to 2D coalescence has been becoming a widely used technique [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33], in which the threading dislocations (TDs) are efficiently bent or even annihilate each other. There are several approaches to investigate the effect of SiN x nanomasks on the TD reduction such as varying either the SiN x deposition temperature or time to modulate the SiN x nano-mask configuration [19][20][21][22], using different growth conditions of the (Al)GaN layer overgrown on the SiN x nano-mask [23][24][25], or inserting multi-SiN x nano-mask into the (Al)GaN buffer layers [26][27][28].…”

“…Especially, inserting a SiN x nano-mask into the matrix of GaN layer to promote the growth mode transition in Coatings 2021, 11, 16 2 of 10 GaN from 3D island-like overgrowth to 2D coalescence has been becoming a widely used technique [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33], in which the threading dislocations (TDs) are efficiently bent or even annihilate each other. There are several approaches to investigate the effect of SiN x nanomasks on the TD reduction such as varying either the SiN x deposition temperature or time to modulate the SiN x nano-mask configuration [19][20][21][22], using different growth conditions of the (Al)GaN layer overgrown on the SiN x nano-mask [23][24][25], or inserting multi-SiN x nano-mask into the (Al)GaN buffer layers [26][27][28]. Among these approaches, configuring a single SiN x nano-mask is considered the simplest strategy.…”

(Invited) Epitaxial III-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor

“…Intermediate layers such as graded or stepped Al x Ga 1-x N layers (38)(39)(40)(41)(42)(43)(44), and strained Al(Ga)N/(Al)GaN superlattices (SLs) (45)(46)(47)(48)(49)(50) have been proven effective in building compressive intrinsic stress, minimizing wafer curvature/bow and reducing crack density of GaN layers after cooldown. In addition, incorporating low-temperature grown Al(Ga)N (51)(52)(53)(54)(55) and Si x N y (43,(56)(57)(58)(59)(60) interlayers can help stress control and reduction of dislocation density.…”

Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD

“…Ma et al [13] have reported the AlN/GaN superlattice interlayer for both stress and dislocation engineering, thus obtaining an enhanced optical output power of unpackaged light-emitting diode chips on Si substrates. However, previous literatures mainly focus on the final strain relaxation but there are only few reports on the detailed generation and propagation of the TDs after the introduction of various interlayers, as well as the micro-structural defects within the interlayer [14][15][16]. In our previous publication on unintentionally doped high resistivity GaN grown with an in-situ annealed InGaN interlayer, the interlayer-induced increase of the edge-type TDs was demonstrated by transmission electron microscopy (TEM) and high-resolution X-ray diffraction (HR-XRD) to reveal the high resistivity mechanisms [17].…”