1993
DOI: 10.1109/55.225583
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Improved floating-gate devices using standard CMOS technology

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Cited by 9 publications
(3 citation statements)
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“…The chip includes all of the elements described in this paper except for the capability of programming the nonvolatile weight storage. Although the weights are stored in floating-gate devices, the ability to program the weights with adequate precision for feedforward operations has been proven elsewhere [10], [48], [52].…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The chip includes all of the elements described in this paper except for the capability of programming the nonvolatile weight storage. Although the weights are stored in floating-gate devices, the ability to program the weights with adequate precision for feedforward operations has been proven elsewhere [10], [48], [52].…”
Section: Resultsmentioning
confidence: 99%
“…is programmed using hot-electron injection [48] by taking to 12 V, to 5 V, to 10 V and to ground. This condition allows a large current to flow in the channel of and so hot-electrons are injected onto the floating-gate of .…”
Section: A Synapse and Weight Storage Circuitsmentioning
confidence: 99%
“…Floating-gate (FG) transistors have been shown to be very reliable and precise current sources when directly programmed with a combination of hot-electron injection and Fowler-Nordheim tunnelling [28,29,30,31]. Floating-gate MOS transistors are similar to a standard MOS device with one exception.…”
Section: Floating Gate Transistorsmentioning
confidence: 99%