Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applications

Kahn, M.; Vallée, C.; Defaÿ, E.; Dubourdieu, C.; Bonvalot, M.; Blonkowski, S.; Plaussu, J.R.; Garrec, Pierre; Baron, T.

doi:10.1016/j.microrel.2007.01.029

Cited by 24 publications

(14 citation statements)

References 16 publications

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“…To overcome this problem, an alternative solution was proposed by M. Khan et al in order to reduce the strong non-linearity [18]. It consists in the introduction of a medium κ dielectric layer material (Y 2 O 3 ) having a positive C/C 0 curve between the high-dielectric and the electrodes.…”

Section: Capacitor Voltage Linearitymentioning

confidence: 99%

EFFECT OF ANNEALING ON THE ELECTRICAL PROPERTIES OF SrTiO₃ THIN FILMS PRODUCED BY ION BEAM SPUTTERING

Jomni

Ouajji

Sylvestre

et al. 2008

Integrated Ferroelectrics

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Thin film capacitors with SrTiO 3 (STO) as dielectric and Pt as electrode material have been prepared by ion beam sputtering. The as-deposited film is amorphous and exhibits a crystallization temperature around 321 • C as proved by X-ray diffraction. The effect of post annealing on the crystalline quality of the films was systematically studied by x-ray diffraction and Atomic Force microscopy (AFM). The temperature and frequency dependent dielectric properties were measured from 30 • C to 200 • C and 0.01 Hz to 10 5 Hz, respectively. The influence of the microstructure of SrTiO 3 thin films on their electrical properties was investigated through an extensive characterization. The electrical properties of SrTiO 3 films appear to be strongly depending on the annealing temperatures. The capacitance voltage (C-V) characteristics reveal an improvement of capacitance density with increasing the annealing temperature.

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Section: Capacitor Voltage Linearitymentioning

confidence: 99%

EFFECT OF ANNEALING ON THE ELECTRICAL PROPERTIES OF SrTiO₃ THIN FILMS PRODUCED BY ION BEAM SPUTTERING

Jomni

Ouajji

Sylvestre

et al. 2008

Integrated Ferroelectrics

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“…Photocatalysts based on strontium titanate (SrTiO 3 ; STO) have been intensively studied in recent years because of their potential applications in the solar-driven water-splitting reaction. 1−4 The properties of STO can be easily controlled by doping, and thus, STO has been widely used in many electronic devices, such as thermoelectric conversion elements, 5 capacitors, 6,7 transparent electrodes, 8 gas sensors, 9 and solar cells. 10−12 For electronic devices, more often than not, defectfree single-crystalline STO (STO-SC) is used, since defects have negative effects on the optical properties and carrier dynamics.…”

Section: Introductionmentioning

confidence: 99%

Behavior and Energy State of Photogenerated Charge Carriers in Single-Crystalline and Polycrystalline Powder SrTiO₃ Studied by Time-Resolved Absorption Spectroscopy in the Visible to Mid-Infrared Region

2015

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The effects of defects on the behavior of photogenerated charge carriers in SrTiO3 (STO) are studied by time-resolved absorption spectroscopy from the visible to mid-IR region. In the case of defect-free single-crystalline STO, free and shallowly trapped electrons are dominant, but they recombine within 50 ns. By contrast, in the case of defect-rich powder STO, the electron lifetime is much longer than 1 ms. The transient absorption spectra show that most of the charge carriers in powder STO are trapped in the defects, which elongates their lifetime. We found that these trapped carriers are nevertheless reactive toward O2 or CH3OH that depends on the trap depth. The steady-state photocatalytic activity is strongly correlated with the lifetime and the reactivity of the trapped charge carriers: the energy state of electrons can be deduced from the spectral shape, especially in the mid-IR region.

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“…Therefore, the traditional dielectrics, SiO 2 and Si 3 N 4 , were forsaken because of their low dielectric constant ͑ Ͻ 10͒ and there is a lot of ongoing effort to develop high-materials ͑ Ͼ 15͒ such as Ta 2 O 5 , HfO 2 , and ZrO 2 , to name a few. [1][2][3][4][5][6][7][8][9][10] An important issue regarding capacitor performances is the voltage linearity, which shows the dependence of capacitance ͑C͒ on the applied bias ͑V͒. For high-oxides it is usual to observe a quadratic voltage dependence of capacitance, ͓C͑V͒-C 0 ͔ / C 0 = ␣V 2 + ␤V, where C 0 is the capacitance at zero bias, and ␣ and ␤ are the quadratic and linear coefficients.…”

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confidence: 99%

“…For most of the high-dielectrics the coefficient ␣ is in the 100-1000 ppm/ V 2 range and the coefficient ␤ is in the 100 ppm/V range. [1][2][3][4][5][6][7][8][9][10][11] As a consequence, for usual working voltages ͑1-3 V͒ the quadratic contribution prevails ͑␣V 2 Ͼ ␤V͒ and the most important parameter that must be controlled is the quadratic coefficient ␣. Usually ␣ is observed to increase dramatically with decreasing oxide thickness.…”

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confidence: 99%

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High performance metal-insulator-metal capacitor using a SrTiO3/ZrO2 bilayer

Jorel

Vallée

Gonon

et al. 2009

Applied Physics Letters

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Future integration of metal-insulator-metal capacitors requires devices with high capacitance density and low quadratic voltage coefficient of capacitance (α). A major problem is that the increase in capacitance density is usually accompanied by increased voltage nonlinearities. By combining two high-k materials with opposite α, it is demonstrated that it is possible to obtain capacitors with both high capacitance density and minimal nonlinearity. A SrTiO3/ZrO2 bilayer was used to elaborate capacitors displaying a voltage coefficient of −60 ppm/V2 associated with a density of 11.5 fF/μm2. These devices constitute excellent candidates for the next generation of metal-insulator-metal capacitors.

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Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applications

Cited by 24 publications

References 16 publications

EFFECT OF ANNEALING ON THE ELECTRICAL PROPERTIES OF SrTiO₃ THIN FILMS PRODUCED BY ION BEAM SPUTTERING

EFFECT OF ANNEALING ON THE ELECTRICAL PROPERTIES OF SrTiO₃ THIN FILMS PRODUCED BY ION BEAM SPUTTERING

Behavior and Energy State of Photogenerated Charge Carriers in Single-Crystalline and Polycrystalline Powder SrTiO₃ Studied by Time-Resolved Absorption Spectroscopy in the Visible to Mid-Infrared Region

High performance metal-insulator-metal capacitor using a SrTiO3/ZrO2 bilayer

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Improved electrical properties using SrTiO3/Y2O3 bilayer dielectrics for MIM capacitor applications

Cited by 24 publications

References 16 publications

EFFECT OF ANNEALING ON THE ELECTRICAL PROPERTIES OF SrTiO3 THIN FILMS PRODUCED BY ION BEAM SPUTTERING

EFFECT OF ANNEALING ON THE ELECTRICAL PROPERTIES OF SrTiO3 THIN FILMS PRODUCED BY ION BEAM SPUTTERING

Behavior and Energy State of Photogenerated Charge Carriers in Single-Crystalline and Polycrystalline Powder SrTiO3 Studied by Time-Resolved Absorption Spectroscopy in the Visible to Mid-Infrared Region

High performance metal-insulator-metal capacitor using a SrTiO3/ZrO2 bilayer

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Product

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EFFECT OF ANNEALING ON THE ELECTRICAL PROPERTIES OF SrTiO₃ THIN FILMS PRODUCED BY ION BEAM SPUTTERING

EFFECT OF ANNEALING ON THE ELECTRICAL PROPERTIES OF SrTiO₃ THIN FILMS PRODUCED BY ION BEAM SPUTTERING

Behavior and Energy State of Photogenerated Charge Carriers in Single-Crystalline and Polycrystalline Powder SrTiO₃ Studied by Time-Resolved Absorption Spectroscopy in the Visible to Mid-Infrared Region