Thin film capacitors with SrTiO 3 (STO) as dielectric and Pt as electrode material have been prepared by ion beam sputtering. The as-deposited film is amorphous and exhibits a crystallization temperature around 321 • C as proved by X-ray diffraction. The effect of post annealing on the crystalline quality of the films was systematically studied by x-ray diffraction and Atomic Force microscopy (AFM). The temperature and frequency dependent dielectric properties were measured from 30 • C to 200 • C and 0.01 Hz to 10 5 Hz, respectively. The influence of the microstructure of SrTiO 3 thin films on their electrical properties was investigated through an extensive characterization. The electrical properties of SrTiO 3 films appear to be strongly depending on the annealing temperatures. The capacitance voltage (C-V) characteristics reveal an improvement of capacitance density with increasing the annealing temperature.
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