Improved Electrical and Thermal Stability of Solution-Processed Li-Doped ZnO Thin-Film Transistors

Impacts of Sn precursors on solution-processed amorphous zinc–tin oxide films and their transistors

“…1 The interfacial trap density is an important parameter, which is affected by the morphology and carrier concentration of active layers and the resistivity values. 39,40 The maximum interfacial trap densities for ZTO 1, 2 and 3 are about 3 6 10 12 cm 22 , due to their smooth morphologies, while the maximum interfacial trap density for ZTO 4 is larger because of its poor morphology. The poor morphology of ZTO 4 could affect the subsequent fabrication of solution-processed PMMA layer and, hence, the interface of ZTO/PMMA.…”

Physical and electrical characterization of Mg-doped ZnO thin-film transistors

“…However, indium is a rare element and is known to suffer from large price fluctuations, hence, limiting its potential to dominate the transparent conductive oxide (TCO) market. Alternative dopants for ZnO such as F [3], Li [4] Mo [5] and Mg [6][7] have been implemented to improve the electrical characteristics of the films.…”

Characterization of novel BaZnSnO thin films by solution process and applications in thin film transistors

“…1(d) shows electrical properties measured by Hall-effect measurements as a function of the Ba concentration in ZnSnO film. As the Ba concentration increases from 0 to 20 mol%, the carrier concentration declines from 6.5 Â 10 17 to 1.2 Â 10 15 cm À3 , and Hall mobility decreases from 4.3 to 1.4 cm 2 /V s. High carrier concentration is unfavorable for the TFT devices because a high leakage current results in device instability [16]. It is easily seen that Ba leads to a remarkable change in electrical properties.…”