2013
DOI: 10.1016/j.orgel.2013.07.011
|View full text |Cite
|
Sign up to set email alerts
|

Improved efficiency roll-off at high brightness in simplified phosphorescent organic light emitting diodes with a crossfading-host

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2014
2014
2018
2018

Publication Types

Select...
7

Relationship

2
5

Authors

Journals

citations
Cited by 18 publications
(3 citation statements)
references
References 20 publications
0
3
0
Order By: Relevance
“…Then the films were transferred into a high-vacuum chamber (operating pressure below 5 × 10 –6 Torr) to deposit the following organic and metal materials. The OLED used 1-nm-thick molybdenum trioxide (MoO 3 ) as a second HIL, 80-nm-thick N , N -dicarbazolyl-3,5-benzene (mCP) as the hole transporting layer (HTL), 0.2-nm-thick iridium­(III) bis­(2-(4-trifluoromethylphenyl)­pyridine) tetraphenylimidodiphosphinate (Ir­(tfmppy) 2 (tpip)) as the emitting layer (EML), 57.5-nm-thick 1,3,5-tris­(1-phenyl-1 H -benzimidazol-2-yl)­benzene (TPBi) as the electron transporting layer (ETL), 1-nm-thick lithium fluoride (LiF) as the electron injection layer (EIL), and 80-nm-thick aluminum (Al) as the cathode. A quartz-crystal monitor was used to monitor the deposition rate.…”
Section: Methodsmentioning
confidence: 99%
“…Then the films were transferred into a high-vacuum chamber (operating pressure below 5 × 10 –6 Torr) to deposit the following organic and metal materials. The OLED used 1-nm-thick molybdenum trioxide (MoO 3 ) as a second HIL, 80-nm-thick N , N -dicarbazolyl-3,5-benzene (mCP) as the hole transporting layer (HTL), 0.2-nm-thick iridium­(III) bis­(2-(4-trifluoromethylphenyl)­pyridine) tetraphenylimidodiphosphinate (Ir­(tfmppy) 2 (tpip)) as the emitting layer (EML), 57.5-nm-thick 1,3,5-tris­(1-phenyl-1 H -benzimidazol-2-yl)­benzene (TPBi) as the electron transporting layer (ETL), 1-nm-thick lithium fluoride (LiF) as the electron injection layer (EIL), and 80-nm-thick aluminum (Al) as the cathode. A quartz-crystal monitor was used to monitor the deposition rate.…”
Section: Methodsmentioning
confidence: 99%
“…twice on the ITO and AgNW/alginate electrodes to form a 60 nm thick film as hole-injection layer (HIL), and then annealed at 120 °C for 10 min. The following deposition of organic and metal materials was operated in a high-vacuum chamber with an base pressure below 5×10 -6 Torr: 1 nm-thick molybdenum trioxide (MoO 3 ) (second HIL), 80 nm-thick N,N-dicarbazolyl-3,5benzene (mCP) (hole transporting layer), 0.2 nm-thick iridium(III) bis(2-(4-trifluoromethylphenyl) pyridine) tetraphenylimidodiphosphinate (Ir(tfmppy) 2 (tpip)) (emitting layer) [6], 57.5 nm-thick 1,3,5-tris(1-phenyl-1H-benzimidazol-2yl)benzene (TPBi) (electron transporting layer), 1 nm-thick lithium fluoride (LiF) (electron injection layer), and 80 nm-thick aluminum (Al) (cathode). The active area of the device was 3 × 3 mm 2 .…”
Section: Oled Device Fabrication: Pedot: Pss Was Spin-coatedmentioning
confidence: 99%
“…However, efficiency roll-off needs to be sincerely considered mainly because triplet exciton has long life time, causing severe exciton quenching at high exciton density with the increase of driving voltages. In this aspect, cohost for phosphor was proved to be an effective way not only for reducing roll-off, but also for high device-efficiency, mainly because of the expansion of recombination zone [8][9][10].…”
Section: Introductionmentioning
confidence: 99%