2018
DOI: 10.1016/j.jeurceramsoc.2018.04.015
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Improved dielectric, nonlinear and magnetic properties of cobalt-doped CaCu3Ti4O12 ceramics

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Cited by 60 publications
(21 citation statements)
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“…The doping of CCTO by Cobalt was studied by Mu et al, [56] Kafi et al [57] and Wang et al [58] Mu et al [56] prepared CaCu 3 Ti 1À x Co x O 12 (x = 0, 0.2, 0.4) ceramics by a conventional solid state reaction. Both X-ray diffraction and energy dispersive X-ray spectroscopy confirmed 3.14 × 10 3 0.161 [42] Spark Plasma Sintering CaCO 3 , TiO 2 , CuO 900°C/5 min 10 5 - [46] Thermobaric Treatment (TBT) CaCO 3 , TiO 2 , CuO CS: 1100°C/24 h TBT:1000°C/10 min (9 GPa) 10 3~1 0 [50] [54] the presence of Cu and Co rich phase at grain boundaries of Co-doped ceramics ( Figure 26).…”
Section: Doping Of Ccto By One Elementmentioning
confidence: 99%
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“…The doping of CCTO by Cobalt was studied by Mu et al, [56] Kafi et al [57] and Wang et al [58] Mu et al [56] prepared CaCu 3 Ti 1À x Co x O 12 (x = 0, 0.2, 0.4) ceramics by a conventional solid state reaction. Both X-ray diffraction and energy dispersive X-ray spectroscopy confirmed 3.14 × 10 3 0.161 [42] Spark Plasma Sintering CaCO 3 , TiO 2 , CuO 900°C/5 min 10 5 - [46] Thermobaric Treatment (TBT) CaCO 3 , TiO 2 , CuO CS: 1100°C/24 h TBT:1000°C/10 min (9 GPa) 10 3~1 0 [50] [54] the presence of Cu and Co rich phase at grain boundaries of Co-doped ceramics ( Figure 26).…”
Section: Doping Of Ccto By One Elementmentioning
confidence: 99%
“…Wang et al [58] showed that the doping of CCTO by 5 % of Co improved the dielectric properties and gave dielectric constant ɛ' � 7.4 × 10 4 and dielectric loss tanδ � 0.034 at room temperature and 1 KHz. The authors explained that the Cobalt replaces the Copper ion in the CCTO structure ( Figure 27).…”
Section: Doping Of Ccto By One Elementmentioning
confidence: 99%
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“…The literature has shown some results obtained using different dopants. Wang et al [17] using 5 mol % of Co (CaCu 2.95 Co 0.05 Ti 4 O 12 ) obtained   5.22 and E b = 300.46 V/cm [17]. When using 20 mol % of Ni (CaCu 2.8 Ni 0.2 Ti 4 O 12 ), they found   5.47, E b = 101.7 V/cm [18].…”
Section: Introductionmentioning
confidence: 97%
“…Regarding CCTO, many studies have already investigated the improvement of electrical properties using dopants [17][18][19][20], the origin of the colossal permittivity [8,21,22] from different points of view and the results were published including single crystals [9,21,23], thin films [24][25][26] and polycrystalline samples [9,11,27,28].…”
Section: Introductionmentioning
confidence: 99%