Improved Dielectric Breakdown Strength of Polyimide by Incorporating Polydopamine-Coated Graphitic Carbon Nitride

Dong, Yinjie; Wang, Zhaoyang; Huo, Shouchao; Lin, Jun; He, Shaojian

doi:10.3390/polym14030385

Cited by 20 publications

(20 citation statements)

References 34 publications

(37 reference statements)

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“…The enhancement of breakdown strength is usually related with the properties of filler and interfacial coupling between fillers and matrix. 5 modified film was higher than that of pure PI film. 6 Guo et al prepared PI/SiO 2 composite film with a weight fraction of 10% of SiO 2 , and they demonstrated that the corona resistance time and conductivity were greatly improved compared with those of the pure PI film.…”

Section: Introductionmentioning

confidence: 76%

“…The breakdown strength of PI films can be effectively improved by adding nanofillers into the PI matrix. The enhancement of breakdown strength is usually related with the properties of filler and interfacial coupling between fillers and matrix . For instance, Harrison et al doped silica dioxide (SiO 2 ) nanoparticles into PI with a gradient weight fraction and found that the breakdown strength of the modified film was higher than that of pure PI film .…”

Section: Introductionmentioning

confidence: 99%

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Largely Enhanced High-Frequency Insulation Performances of Polyimide by Incorporating Siloxane-Based Fillers

Dong

Xie

Yang

et al. 2022

ACS Appl. Polym. Mater.

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The growing demand for renewable energy promotes the rapid development of power electronic technology. A safe insulation system is extremely important for the reliable operation of power electronic devices. Different from the conventional insulation system, the insulation system of power electronic devices is subjected to high-frequency voltage for a long period. The insulation failure of polymer dielectrics under high-frequency voltage is increasingly prominent. However, seldom is attention paid to investigate the high-frequency insulation of polymer dielectrics. In this work, we incorporated a 5% equivalent molar content of silica dioxide (SiO2), 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethyldisiloxane (GAPD), and PSS-octavinyl-substituted (POSS) into the polyimide (PI) matrix and investigated the effects of these fillers on the high-frequency insulation performance of PI films. We found that the high-frequency breakdown strength of PI composites was significantly improved compared with that of pristine PI film and the POSS/PI composites film displayed the highest high-frequency breakdown strength. We analyzed the changes of the dielectric, resistivity, and trap level properties and found that the enhancement of high-frequency strength could be attributed to the suppressed polarization loss and introduced deep traps. High frequency voltage would cause the accumulation of heat inside the film, and the suppressed dielectric loss could alleviate the heat accumulation PI films and accordingly weaken the ablation degree of film surface. Besides, the introduction of deep traps could mitigate the distortion of local electric field. The synergetic effects of above two factors contribute to the enhancement of high-frequency insulation performance of PI composites. The findings of this work are promising to provide a path for the design of high-frequency insulation polymer dielectrics.

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Section: Introductionmentioning

confidence: 76%

Section: Introductionmentioning

confidence: 99%

Largely Enhanced High-Frequency Insulation Performances of Polyimide by Incorporating Siloxane-Based Fillers

Dong

Xie

Yang

et al. 2022

ACS Appl. Polym. Mater.

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“…According to national standard GB/T 1408.1-2006, the relationship between the tensile stress and the insulation properties of the material was investigated by subjecting four groups of polyethylene specimens with different elongation ratios to a frequency AC breakdown test. The experimental electrode is a spherical electrode with a diameter of 25 mm, and the polyethylene breakdown experimental setup is shown in Figure 1 [ 20 , 21 ]. The voltage is increased to 15 kV and then the voltage is increased at a constant rate until the sample breaks down.…”

Section: Methodsmentioning

confidence: 99%

Effects of Mechanical Stress on Insulation Structure and Performance of HV Cable

Su¹,

Wei²,

Zheng

et al. 2022

Polymers

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Mechanical stresses generated during manufacturing and laying process of high voltage cables can result in degradation of insulation properties, affecting the stable operation of the transmission system. Traditional test methods for testing the effect of mechanical stress on the insulation properties of polyethylene still have some shortcomings to be explored and it is able to explain the changes of the insulation properties of polyethylene under mechanical stress from a microscopic perspective. In order to further study the effect of stress on the insulation properties of polyethylene, microstructural changes, the breakdown field strength, conductivity and charge distribution of polyethylene at different elongation rates are investigated by a combination of experimental and molecular dynamics simulations. The results show that the increase in stress leads to a decrease in crystallinity and microcrystalline size of the material decrease. The untwisting and orientation of the polyethylene molecular chains during the stretching process can create cavities, resulting in an uneven sample distribution and thickness reduction, leading to a reduction in the breakdown field strength. Meanwhile, some crystal regions are transformed into amorphous regions. The loose amorphous regions facilitate the directional migration of carriers, resulting in the increase of conductivity. When the elongation ratio is smaller, the distance between the molecular chains increases and the trap depth of the specimen becomes shallower. This facilitates the migration of ions and electrons and increases the rate of decay of the surface potential. When the stretch is further increased, the trap depth will become larger, decreasing the decay rate of the surface potential and reducing the insulation properties of the polyethylene. Meanwhile, the molecular dynamics model of semi-crystalline polyethylene was developed to observe the microstructure and energy changes during the stretching process. The conclusions in terms of tensile tests were verified from a microscopic perspective.

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“…79 It may be that the submicron thickness of the film, as well as the change in film roughness, allows the leakage current to have only a small change when the porosity increases. In addition, the breakdown field strength of these organic films is higher than that of pure polyimide (PI) films (∼1.79 MV/cm), 77 which are known to be widely used as dielectric materials in the field of electronics.…”

Section: Dielectric and Electricalmentioning

confidence: 99%

Covalent Grafting of PMMA Organic Film on Porous Silicon for Achieving Ultralow-k Organic Films

Cao

Zheng

Xue

et al. 2022

ACS Appl. Electron. Mater.

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In the current electronics industry, chip interconnect density is continuously increasing and high-frequency communication is further developed. To effectively reduce the adverse effects such as resistance−capacitance delay and signal crosstalk, it is urgent to develop organic dielectric films with lower dielectric constants. In this study, chemical grafting method via aryl diazonium chemistry is used to deposit polymethylmethacrylate (PMMA) films on the porous Si surface. The differences in surface morphology and structure of thin films on flat silicon and porous silicon are studied. In addition, we study the effect of substrate porosity on the dielectric constant, and finally obtain porous PMMA films with dielectric constants ranging from 1.9 to 1.5. Compared with the PMMA film prepared on flat silicon, the film prepared on porous silicon has the advantages of faster growth rate, larger thickness adjustable range, stronger adhesion to the substrate, and lower dielectric constant. The dielectric constant of uniform porous PMMA films obtained in this experiment is further decreased compared with inorganic SiO 2 (ε 1 = 3.9) and dense PMMA films (ε 1 = 2.8−2.4). And the dielectric loss of PMMA films also decreases with the increase of porosity. This is a method for preparing porous polymers, which is more suitable for in situ thin film preparation in high-density electronic interconnections than traditional methods for preparing porous polymers. Theoretically, this method can be used to prepare other vinyl organic films on porous silicon surface, making it have better application prospects in the field of higher-frequency communication in the future.

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Improved Dielectric Breakdown Strength of Polyimide by Incorporating Polydopamine-Coated Graphitic Carbon Nitride

Cited by 20 publications

References 34 publications

Largely Enhanced High-Frequency Insulation Performances of Polyimide by Incorporating Siloxane-Based Fillers

Largely Enhanced High-Frequency Insulation Performances of Polyimide by Incorporating Siloxane-Based Fillers

Effects of Mechanical Stress on Insulation Structure and Performance of HV Cable

Covalent Grafting of PMMA Organic Film on Porous Silicon for Achieving Ultralow-k Organic Films

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