Improved crystal quality and harmonic generation in GaSe doped with indium

Suhre, Dennis R.; Singh, N. B.; Balakrishna, V.; Fernelius, Nils C.; Hopkins, F. Kenneth

doi:10.1364/ol.22.000775

Cited by 90 publications

(52 citation statements)

References 10 publications

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“…As large an increase in the efficient second-order nonlinear susceptibility coefficient for GaSe as from 37 to 51 pm V 21 is observed for GaSe doped with heavier In due to improved optical quality 19 . The coefficient was further increased up to 75 pm V 21 by Ag doping 19 . GaSe doped with 0.5 at.% of Er in charge composition demonstrated a 24% increase in the intrinsic nonlinearity 71 .…”

Section: Frequency Conversion: Optimal Dopingmentioning

confidence: 97%

“…S and Te (anions) and In (cation), generating binary isostructural compounds GaS, GaTe, and InSe, respectively, may form solid solution crystals GaSe 12x S 19,25,26,[67][68][69] , where x is the mixing ratio of the parent binary compounds. The closer the match in the atomic size of the substituting atoms, the larger the mixing ratio of solid solution crystals that may be grown with suitable optical quality, as in the following: GaSe 12x S x with x f 0.44 (11 mass.…”

Section: Specific Features Of the Grown Crystalsmentioning

confidence: 99%

“…With careful preparation, it is possible to produce optical quality surfaces along the (0001) direction, which is orthogonal to the c-axis 6 . Access to other crystallographic directions and fine polishing of exfoliated samples are hampered because GaSe has perfect cleavage and low hardness 6,19 . The hardness of GaSe has been measured to be close to 0 on the Mohs' scale 9 .…”

Section: Introductionmentioning

confidence: 99%

“…The original e-polytype structure of GaSe is strengthened by doping; meanwhile, the physical properties responsible for the efficiency of frequency conversion and the possibility of electro-optic applications may be noticeably modified. However, due to the negative effect on optical nonlinearity of doping by sulfur, the first agent explored 24 , only a few other dopants (In, Te, Er, and Ag), in limited concentration ranges, were used until the last decade to modify further physical properties for nonlinear optical applications 19,21,25,26 . In addition, these studies are mostly related to the physical properties of the ordinary light waves.…”

Section: Introductionmentioning

confidence: 99%

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Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

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Section: Frequency Conversion: Optimal Dopingmentioning

confidence: 97%

Section: Specific Features Of the Grown Crystalsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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“…Another behavior in the III-VI DMS with no comparable II-VI DMS system 10 is the large thermal hysteresis between 90 and 290 K recently reported in In 1−x Mn x Se. 6,7 While spin-glass transitions are known to exist in a number of systems 10,11 including II-VI DMS such as Zn 1−x Mn x Te, 12 no III-VI DMS has been reported to exhibit a spin-glass transition except for Ga 1−x Mn x S. 13 The III-VI semiconductors GaSe, 8,[14][15][16][17][18][19] InSe, 15,18-24 GaTe, 25 and GaS ͑Refs. 26-28͒ have received considerable interest in the last few years because of their remarkable nonlinear optical properties.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear magnetization behavior near the spin-glass transition in the layered III-VI diluted magnetic semiconductor Ga1−xMnxS

Pekarek

Watson

Garner

et al. 2007

Journal of Applied Physics

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Magnetic properties of single crystalline Ga1−xMnxS (x=0.09) have been measured near the spin-glass transition. No other III-VI DMS is currently known to exhibit a spin-glass transition for comparison with Ga1−xMnxS. Ga1−xMnxS (Tc=11.2K) shows unexpected similarity to II-VI DMS Zn1−xMnxTe (Tc=20.8K). For both systems, the quantity χnl=−Mnl∕H (where Mnl=Mtotal−Mlinear) diverges as the temperature approaches the spin-glass transition temperature Tc from above. It also increases with applied field at temperatures just above Tc for both systems. The spin-glass transitions in both Ga1−xMnxS and Zn1−xMnxTe follow the same universal scaling function with the same critical exponent values (γ=4.0±1.0 and β=0.8±0.2). The temperature of Ga1−xMnxS’s low-field spin-glass transition cusp was found to occur at 10.9K. As expected, this is slightly lower than the true spin-glass transition temperature Tc=11.2±0.2K obtained from the scaling analysis. The asymptotic, zero-field limit of the spin-glass transition cusp was found to persist at 10.9K up to ∼1T before being suppressed to lower temperatures with increasing field. Questions remain about if Ga1−xMnxS should belong in the same universality class as Zn1−xMnxTe since Ga1−xMnxS is quasi-two-dimensional and Zn1−xMnxTe is three-dimensional.

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Growth of GaSe and GaS single crystals

Кох¹,

Andreev²,

Svetlichnyi³

et al. 2011

Cryst. Res. Technol.

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Key words synthesis of chalcogenides, Bridgman technique, nonlinear optic materials.The paper describes principal manipulations to prepare single crystals of GaSe and GaS. A new simple method of synthesis with single-zone heating furnace is proposed. Growth of crystals was performed by modified Bridgman method with the use of rotating heat field. Raman and optical depth spectra show high structural and optical quality of obtained crystals.

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Improved crystal quality and harmonic generation in GaSe doped with indium

Cited by 90 publications

References 10 publications

Doped GaSe crystals for laser frequency conversion

Doped GaSe crystals for laser frequency conversion

Nonlinear magnetization behavior near the spin-glass transition in the layered III-VI diluted magnetic semiconductor Ga1−xMnxS

Growth of GaSe and GaS single crystals

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