1988
DOI: 10.1088/0741-3335/30/7/003
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Improved confinement in HBTX with removal of tile limiters

Abstract: Removing the limiters from the HBTX experiment has had the beneficial effect of reducing the loop voltage by about a third. Since the poioidal beta, be, remains largely unaltered there is a corresponding 50% improvement in the energy conhement time. Soft X-ray measurements show a suprathennal tail in the electron energy distribution for the first time. The 156 graphite tiles cover about 8% of the vacuum vessel and protrude 1 cm into the piasma. The consequent drop in loop voltage with their removal is in agree… Show more

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Cited by 36 publications
(12 citation statements)
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“…Data from a CTX spheromak with reduced field errors in a solid flux conserver indeed show the expected result [24][25][26]. We also acknowledge that our confinement model and the supporting experimental results are similar to those in the HBTX RFP [4,5,20].…”
Section: Discussionsupporting
confidence: 75%
See 1 more Smart Citation
“…Data from a CTX spheromak with reduced field errors in a solid flux conserver indeed show the expected result [24][25][26]. We also acknowledge that our confinement model and the supporting experimental results are similar to those in the HBTX RFP [4,5,20].…”
Section: Discussionsupporting
confidence: 75%
“…Much worse than impurities from the wall and a reduction of the effective size of the device, magnetic field errors result in strong relaxation activity and faster helicity dissipation rates, which can result in severely degraded confinement. In fact, reduction of field errors has resulted in dramatically improved confinement in the HBTX RFP [4,20], consistent with reduced relaxation activity allowing improved confinement.…”
Section: Ion Energy Correlationsmentioning
confidence: 99%
“…Insertion of a movable limiter into the HBTX plasma resulted in an increase of the loop voltage and heating of ions [8]. The removal of tile limiters in HBTX [9,10] led to a reduction of the loop voltage by about one third, an increase of the electron temperature T e from 350 eV to 460 eV, and a decrease of the ion temperature Tj from 360 eV to 230 eV. In the ZT-40M experiment [11], the relation between T; and the fraction of the total input power absorbed by fluctuations was estimated using a modified Bessel function model.…”
Section: Introductionmentioning
confidence: 99%
“…Alternatively, we could attribute R p I p completely to V s without introducing V . We showed a global scaling of Z * in equation (8), which showed an increase of Z * with I p . In particular cases in TPE-1RM15 and TPE-1RM20, Z * increases from ∼4 at I p = 100 kA to ∼8 at I p = 220 kA: namely, Z * increases approximately proportionally to I p , which is consistent with the global scaling in equation (8).…”
Section: Critical Input Power In the I P -Scanmentioning
confidence: 76%