Improved conductivity of Sb-doped SnO2 thin films

Abstract

Sb-doped SnO2 thin films at different thickness have been grown by sol-gel dip-coating method. All of the films exhibit degenerate semiconductor behavior and high free carrier concentrations. In the films, electrical transport can be explained reasonably well by assuming the electron-electron interactions (EEIs) contribution to the measured electrical conductivity. Our experimental observations are consistent with the theoretical description of the EEI. The effect of films thickness on the EEI contribution is also discussed. When the thickness of film reaches to 1550 nm, the agreement between the EEI theory and experimental data becomes unsatisfactory.

Tin Oxide Electron‐Selective Layers for Efficient, Stable, and Scalable Perovskite Solar Cells

“…SnO 2 owes these characteristics to its unique band structure and defect chemistry. [213][214][215][216] To further improve its charge selectivity when interfacing with perovskite absorbers, further deciphering of its defect chemistry is critical, which is particularly important to define adequate passivation strategies, which is discussed in Section 5.…”

Fluorine highly doped nanocrystalline SnO2 thin films prepared by SPD technique

“…The effective way to enhance the electrical conductivity and the optical transparency of SnO 2 is the doping with thorium, fluorine, antimony, niobium etc. When doping level is high, the position of the Fermi energy (E f ) level lies within the conduction band (for n-type) and it causes to the formation of a degenerate band [7,8]. Tin dioxide is a promising material for applications in gas sensors, photovoltaic solar energy conversion devices, and electrochromic device [2,4,9], electrocatalytic anodes, glass coatings for furnace windows as well as transparent electrodes for liquid crystal displays, flat-panel displays and defrosting windows [10,11].…”

High Light Absorption and Charge Separation Efficiency at Low Applied Voltage from Sb-Doped SnO2/BiVO4 Core/Shell Nanorod-Array Photoanodes

“…However, this is the first study of SnO 2 /BiVO 4 heterojunctions in the form of core/shell NRAs. The Sb:SnO 2 /BiVO 4 NRA photoanodes share the same benefits as those composed of BiVO 4 coated onto WO 3 wire arrays, but with the added advantages of minimal doping of Sn 4+ from the nanorods into the BiVO 4 , thereby preventing the introduction of charge recombination sites, and higher electrical conductivity of the Sb:SnO 2 nanorods compared to WO 3 wires. − These advantages together enable the Sb:SnO 2 /BiVO 4 NRA photoanode to achieve a peak η abs × η sep of ∼76.2% at 0.6 V RHE for monochromatic light with wavelength of 450 nm, and η abs × η sep of ∼51% at 0.6 V RHE for AM 1.5G sunlight, as determined by integration of the quantum efficiency over the standard AM 1.5G spectrum. To the best of our knowledge, these are among the highest η abs × η sep efficiencies reported to date at this voltage for any BiVO 4 photoanode.…”