2015
DOI: 10.1016/j.matlet.2015.04.130
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Fluorine highly doped nanocrystalline SnO2 thin films prepared by SPD technique

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Cited by 33 publications
(9 citation statements)
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(11 reference statements)
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“…To investigate the feasibility of F – doping in MOs by thin-film processing via combustion synthesis, several chemical fluoride precursors and fabrication conditions for film deposition were first screened. In–O was chosen as a model system for F – doping, since it is a simple binary oxide widely used for TFT fabrication. ,, Indium nitrate (In­(NO 3 ) 3 ) was chosen as the metal source and oxidizer, while acetylacetone (AcAcH) is the standard fuel. ,,, After several trials (Table S1), NH 4 F was chosen as the fluoride source, since it is inexpensive and widely used for F – doping in transparent conducting oxides (e.g., F – -doped tin oxide) by sol–gel processes. A small amount of concentrated (conc) HNO 3 (0.35% (v/v)) is added to the combustion precursor solution before film deposition to prevent the formation of insoluble nanoparticles (Figure S1). In preliminary experiments using NH 4 F-containing combustion formulations, it was found that annealing the F – -containing thin-film precursors at high annealing temperatures for extended times typical of MO combustion synthesis (250–300 °C for 20–60 min, Figure a) ,,,,, does not facilitate F – incorporation into the MO films likely due to volatile HF elimination during annealing and weak In–F bonding (vide infra) .…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…To investigate the feasibility of F – doping in MOs by thin-film processing via combustion synthesis, several chemical fluoride precursors and fabrication conditions for film deposition were first screened. In–O was chosen as a model system for F – doping, since it is a simple binary oxide widely used for TFT fabrication. ,, Indium nitrate (In­(NO 3 ) 3 ) was chosen as the metal source and oxidizer, while acetylacetone (AcAcH) is the standard fuel. ,,, After several trials (Table S1), NH 4 F was chosen as the fluoride source, since it is inexpensive and widely used for F – doping in transparent conducting oxides (e.g., F – -doped tin oxide) by sol–gel processes. A small amount of concentrated (conc) HNO 3 (0.35% (v/v)) is added to the combustion precursor solution before film deposition to prevent the formation of insoluble nanoparticles (Figure S1). In preliminary experiments using NH 4 F-containing combustion formulations, it was found that annealing the F – -containing thin-film precursors at high annealing temperatures for extended times typical of MO combustion synthesis (250–300 °C for 20–60 min, Figure a) ,,,,, does not facilitate F – incorporation into the MO films likely due to volatile HF elimination during annealing and weak In–F bonding (vide infra) .…”
Section: Resultsmentioning
confidence: 99%
“…Thus, for any crystal domains, F – will act as a donor in conducting (e.g., FTO ) or semiconducting (e.g., F:ZnO) metal oxides. Because the F states do not contribute near the band edges (Figure a), due to the greater In–F bond strength (516 kJ/mol) versus the In–O (346 kJ/mol), the presence of F – cannot contribute to the free electron scatteringas an O vacancy in the crystalline oxide does.…”
Section: Resultsmentioning
confidence: 99%
“…One can observe from the reflectance spectra that the increasing in the nanoparticles density leads to decrease the intensity of reflection, it is suggested that the presence of titania nanoparticles in starch-based polymer improved the UV-shielding property of the polymer. The absorption coefficient (α) was calculated by using the equation [15]…”
Section: Resultsmentioning
confidence: 99%
“…The calculated lattice constant a are tabulated in table 1 which are in a good agreement with the reported value in (JCPDS Card). The crystallite size for the preferential orientations of the prepared samples was calculated using Debye-Sherrer formula [24,25].…”
Section: Experiments Detailsmentioning
confidence: 99%