2012
DOI: 10.1039/c2cp41552f
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Improved ambient operation of n-channel organic transistors of solution-sheared naphthalene diimide under bias stress

Abstract: Large arrays of n-channel organic thin film transistors of a core-chlorinated naphthalene diimide were processed by solution shearing on a silicon dioxide dielectric exhibiting ambient stable electron mobilities of up to 0.95 cm(2) V(-1) s(-1). Under bias stress an increase in effective charge carrier mobility of up to 4.26 cm(2) V(-1) s(-1) has been observed.

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Cited by 42 publications
(32 citation statements)
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“…The combined effect of electron-withdrawing halogen substituents at the core and fluorinated alkyl chains in the imide position results in a further decrease of the redox potentials, hence the first reduction of dichlorinated derivatives 10 a (R 1 = CH 2 C 3 F 7 ) and 10 b (R 1 = CH 2 C 4 F 9 ) appears at À0.79 V, which corresponds to a LUMO energy of about À4 eV relative to the vacuum level (Scheme 6). The outstanding electron mobilities of greater than 1 cm 2 V À1 s À1 in vacuum- [51] and in solution-processed [52] thin-film transistors, as well as up to 8.6 cm 2 V À1 s À1 in singlecrystal transistors (Figure 5), [29] combined with their very high air-stability, make the NDI derivaties 10 a,b exceptional . Schematic representation of the influence of core substituents on the energy levels of the frontier orbitals of selected NDI derivatives and a selection of the corresponding UV/Vis spectra.…”
Section: Core Functionalization With Nucleophilesmentioning
confidence: 98%
“…The combined effect of electron-withdrawing halogen substituents at the core and fluorinated alkyl chains in the imide position results in a further decrease of the redox potentials, hence the first reduction of dichlorinated derivatives 10 a (R 1 = CH 2 C 3 F 7 ) and 10 b (R 1 = CH 2 C 4 F 9 ) appears at À0.79 V, which corresponds to a LUMO energy of about À4 eV relative to the vacuum level (Scheme 6). The outstanding electron mobilities of greater than 1 cm 2 V À1 s À1 in vacuum- [51] and in solution-processed [52] thin-film transistors, as well as up to 8.6 cm 2 V À1 s À1 in singlecrystal transistors (Figure 5), [29] combined with their very high air-stability, make the NDI derivaties 10 a,b exceptional . Schematic representation of the influence of core substituents on the energy levels of the frontier orbitals of selected NDI derivatives and a selection of the corresponding UV/Vis spectra.…”
Section: Core Functionalization With Nucleophilesmentioning
confidence: 98%
“…[13][14][15][16][17] Perylene and naphthalene tetracarboxylic bisimides (PDIs and NDIs) were among the most used structures from the early stages in the development of n-type OSCs due to the ease of synthesis, chemical stability and high electron accepting properties. [18][19][20][21][22][23][24] Moreover, perfluorophenyl and perfluoroalkyl-substituted OSCs have also been widely developed by incorporating thiophene/phenylene backbones. [25][26][27][28] The advantages of latter OSCs are the availability of various building blocks and ease in fine-tuning its the material properties.…”
Section: Introductionmentioning
confidence: 99%
“…The improvement in mobilities was attributed to the trapping of the charge carriers by ambient oxidants. Furthermore, 241a-based OFETs fabricated by solution shearing technique, afforded electron mobility increased up to 4.26 cm 2 V −1 s −1 under bias stress after 1000 cycles [303], and the single crystal FET devices of 241a showed higher mobilities of up to 8.6 cm 2 V −1 s −1 [304]. The cyano-substituted derivative, 242 afforded a low mobility of about 4.7 × 10 −3 cm 2 V −1 s −1 , whereas dicyano substituted derivative 243 exhibited an electron mobility of 0.15 cm 2 V −1 s −1 , which is comparable to that of 240c unsubstituted by cyano groups [305].…”
Section: Diimidesmentioning
confidence: 98%