A Unique Solution-Processable n-Type Semiconductor Material Design for High-Performance Organic Field-Effect Transistors

Mamada, Masashi; Shima, Hidetaka; Yoneda, Yasuhiro; Shimano, Tetsuro; Yamada, Natsuko; Kakita, Kazuaki; Machida, Toshikazu; Tanaka, Yasuhiro; Aotsuka, Sei; Kumaki, Daisuke; Tokito, Shizuo

doi:10.1021/cm503579m

Cited by 79 publications

(55 citation statements)

References 54 publications

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“…The benzobis(thiadiazole) derivative, TU-3 (Yamagata University and Ube Industries, Ltd.), [26,33] and poly(α-methylstyrene) (average M w ≈ 100 000, Sigma-Aldrich) were dissolved in 1-methylnaphthalene at a ratio of 0.045 and 0.015 wt%, respectively, and was used for the n-type semiconductor ink.…”

Section: Methodsmentioning

confidence: 99%

Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing

Takeda

Yoshimura

Shiwaku

et al. 2017

Adv Elect Materials

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OTFT technology has the potential to produce integrated circuits such as microprocessors [24] and amplifier circuits [25] with high mechanical flexibility. In particular, complementary integrated circuits combining both p-type and n-type OTFT devices possess many advantages including low power consumption in steady state operation, full-swing logic circuit output, and high noise margin. For these reasons, realizing complementary integrated circuits using reverse offset printing is highly desired, although the fabrication processes and device structures for them have not been fully established.In this study, we demonstrate organic complementary inverter circuits with a stacked structure using fully printed electrodes formed with reverse offset printing. Reverse offset printing and a silver nanoparticle inks sinterable at low temperature were adopted for the precise patterning of source, drain (S/D), and gate electrodes. The p-type and n-type semiconductor layers were also fabricated from solution, and exhibited effective mobilities of 0.41 and 0.2 cm 2 V −1 s −1 , respectively. The complementary inverter circuits using these OTFTs operated at a low supply voltage of 2.5 V with a gain of 14 and achieved high signal gain up to 25 at supply voltage 10 V.The silver (Ag) electrodes were patterned on a glass substrate using reverse offset printing with the process flow depicted in Figure 1a. There are three main steps in the reverse offset printing process: coating, patterning, and transfer. First, the silver ink was coated on the polydimethylsiloxane blanket with a slit coater (step 1: coating). Next, the unnecessary areas were removed from the blanket with a glass printing plate (step 2: patterning). Finally, the silver ink on the blanket was transferred to the substrate (step 3: transfer). Two kinds of silver nanoparticle inks sinterable at 120 °C were used for the source and drain (RAGT-36, DIC) and gate (RAGT-28, DIC) electrodes. Since the drying time between each step is an important factor for realizing high-resolution patterns, [22] the drying time was optimized for Ag nanoparticles. The thickness of the silver layers was controlled by the coating speed in the Step 1.The surface profile and the patterning resolution of the printed electrodes were evaluated using a stylus-type surface profiler (Dektak XT, Bruker) and an optical microscope. The cross-sectional profile (Figure 1b) indicates that the printed electrodes had uniform thicknesses of 100 nm, a flat top p-Type and n-type organic thin film transistors (OTFTs) and complementary inverter circuits with finely patterned electrodes are fabricated by reverse offset printing. The electrodes achieve a channel length of less than 3 µm under optimized printing conditions. High-performance OTFTs are fabricated using these electrodes and printed p-type and n-type organic semiconductors, each achieving a mobility of 0.2 cm 2 V −1 s −1 at a channel length of 50 µm. A complementary inverter circuit fabricated with a stacked OTFT structure is demonstrated using reverse o...

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Section: Methodsmentioning

confidence: 99%

Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing

Takeda

Yoshimura

Shiwaku

et al. 2017

Adv Elect Materials

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“…Mamada et al reported a series of BBT derivatives among which 5m has impressive atmospheric stability. 253 The mobility of 0.61 cm 2 V À1 s À1 measured inside a glove box remains unchanged for one month and performance reduction by 10% after half a year demonstrates its excellent ambient stability. A highly ambient stable fluorinated acrylonitrile derivative 5n was synthesized by Nagamatsu and co-workers.…”

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confidence: 92%

Trends in molecular design strategies for ambient stable n-channel organic field effect transistors

2017

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aIn recent years, organic semiconducting materials have enabled technological innovation in the field of flexible electronics. Substantial optimization and development of new p-conjugated materials has resulted in the demonstration of several practical devices, particularly in displays and photoreceptors.However, applications of organic semiconductors in bipolar junction devices, e.g. rectifiers and inverters, are limited due to an imbalance in charge transport. The performance of p-channel organic semiconducting materials exceeds that of electron transport. In addition, electron transport in p-conjugated materials exhibits poorer atmospheric stability and dispersive transient photocurrents due to extrinsic carrier trapping. Thus development of air stable n-channel conjugated materials is required. New classes of materials with delocalized n-doped states are under development, aiming at improvement of the electron transport properties of organic semiconductors. In this review, we highlight the basic tenets related to the stability of n-channel organic semiconductors, primarily focusing on the thermodynamic stability of anions and summarizing the recent progress in the development of air stable electron transporting organic semiconductors. Molecular design strategies are analysed with theoretical investigations.

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“…1,2,5 Furthermore, incorporation of the OCF 3 group into organic molecules can increase their melting point and boiling point difference under ambient pressure, and lower their surface tension, dielectric constant, and pour point. 1,11,12 These properties are particularly useful in designing electronic devices and materials; as a result, the OCF 3 -containing molecules can be found in electro-optical materials used for the development of liquid crystal displays, 13 soluble organic semiconductor, 14 and melt-processable fluoropolymers such as per-fluoroalkoxy alkanes. 12 …”

Section: Introductionmentioning

confidence: 99%

Access to a new class of synthetic building blocks via trifluoromethoxylation of pyridines and pyrimidines

Feng

Lee

et al. 2016

Chem. Sci.

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Since the first synthesis of trifluoromethyl ethers in 1935, the trifluoromethoxy (OCF3) group has made a remarkable impact in medicinal, agrochemical, and materials science research. However, our inability to facilely incorporate the OCF3 group into molecules, especially heteroaromatics, has limited its potential across a broad spectrum of technological applications. Herein, we report a scalable and operationally simple protocol for regioselective trifluoromethoxylation of a wide range of functionalized pyridines and pyrimidines under mild reaction conditions. The trifluoromethoxylated products are useful scaffolds that can be further elaborated by amidation and palladium-catalysed cross coupling reactions. Mechanistic studies suggest that a radical O-trifluoromethylation followed by the OCF3-migration reaction pathway is operable. Given the unique properties of the OCF3 group and the ubiquity of pyridine and pyrimidine in biologically active molecules and functional materials, trifluoromethoxylated pyridines and pyrimidines could serve as valuable building blocks for the discovery and development of new drugs, agrochemicals, and materials.

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A Unique Solution-Processable n-Type Semiconductor Material Design for High-Performance Organic Field-Effect Transistors

Cited by 79 publications

References 54 publications

Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing

Organic Complementary Inverter Circuits Fabricated with Reverse Offset Printing

Trends in molecular design strategies for ambient stable n-channel organic field effect transistors

Access to a new class of synthetic building blocks via trifluoromethoxylation of pyridines and pyrimidines

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