Improved algorithm for Monte Carlo studies of electron transport in degenerate semiconductors

Borowik, Piotr; Adamowicz, Ludwik

doi:10.1016/j.physb.2005.05.021

Cited by 17 publications

(14 citation statements)

References 7 publications

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“…This effect is usually included to MC simulations using rejection techniques (Lugli and Ferry 1985;Borowik and Thobel 1998;Borowik and Adamowicz 2005). In most of THz lasers structures, electron density is so low that degeneracy of electron gas effect may be omitted.…”

Section: Model Of Qcl Operationmentioning

confidence: 99%

Monte Carlo modeling applied to studies of quantum cascade lasers

2017

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One of the commonly used approaches of solving electron transport problems in quantum cascade lasers (QCL) is the Monte Carlo (MC) method, based on semiclassical description in the framework of the Boltzmann Transport Equation. A major benefit of MC modeling is that it only relies on well-established material parameters and structure specification, in most cases without the need to use phenomenological parameters. The results of the modeling can be easily interpreted and they give microscopic insight of QCL operation. The goal of the present paper is to review the application of the MC technique to the studies of operation of QCL. The description of the components of the simulation algorithm is provided. Various physical mechanisms governing electron transport in QCL are described and their influence on the operation are reviewed.

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Section: Model Of Qcl Operationmentioning

confidence: 99%

Monte Carlo modeling applied to studies of quantum cascade lasers

2017

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“…When we studied electron transport in degenerate conditions, we used a Monte Carlo algorithm accounting for the Pauli exclusion principle, described in Refs. .…”

Section: Theoretical Modelmentioning

confidence: 99%

Monte Carlo studies of low‐field electron transport in monolayer silicene and graphene

Borowik

Thobel

Adamowicz

2016

Physica Status Solidi (a)

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Electron mobility and diffusion coefficients in monolayer silicene and graphene are calculated by Monte Carlo simulations using a simplified band structure with linear energy bands. Temperature evolution of the low-field mobility and diffusion coefficients is presented. Calculated characteristics of the low-field mobility in silicene exhibit a 1/T 3 dependence for nondegenerate electron gas conditions, which is attributed to dominant acoustic phonon scattering and to the linear band structure of the material. In degenerate conditions, a 1/T dependence is found in silicene. In graphene, there is no such simple power relation since optical and acoustic phonon scattering have comparable influences on electron transport. It is also found that electron-electron scattering only slightly modifies the low-field electron mobility in a degenerate electron gas.

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“…Several methods have been proposed to reduce these limits (for examples cf. [11], [12]). Our option consists in calculating the occupation function f n (E) for each subband n of each valley v, at each time step, in energy space instead of the rigorous k-space in order to limit the particle noise fluctuation.…”

Section: Inclusion Of the Pauli Exclusion Principlementioning

confidence: 99%

Monte Carlo study of 2D electron gas transport including Pauli exclusion principle in highly doped silicon

Carosella

Saint-Martin²,

Bournel

et al. 2008

Phys. Status Solidi (c)

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A Multi Sub‐band Monte Carlo Simulator improved to efficiently include the Pauli Exclusion Principle is presented. It is used to study the transport in highly doped and ultra‐thin silicon film. Both steady state and transient regime of transport for silicon films under uniform driving field are investigated. Such approach aims to be carried out in a full device simulator to improve the modeling of the access region of nano‐Double Gate MOSFETs. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Improved algorithm for Monte Carlo studies of electron transport in degenerate semiconductors

Cited by 17 publications

References 7 publications

Monte Carlo modeling applied to studies of quantum cascade lasers

Monte Carlo modeling applied to studies of quantum cascade lasers

Monte Carlo studies of low‐field electron transport in monolayer silicene and graphene

Monte Carlo study of 2D electron gas transport including Pauli exclusion principle in highly doped silicon

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