Monte Carlo study of 2D electron gas transport including Pauli exclusion principle in highly doped silicon

Carosella, Francesca; Saint-Martin, Jérôme; Bournel, A.; Galdin‐Retailleau, S.; Dollfus, Philippe

doi:10.1002/pssc.200776524

Cited by 5 publications

(1 citation statement)

References 14 publications

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“…For this purpose, MultiSubband Monte Carlo (MSMC) simulations have been performed, taking into account the main scattering mechanisms, such as charged impurities in the access regions, and Pauli exclusion principle [7]. Furthermore, the ballistic resistance (defined as the resistance of the channel in absence of scattering) was extracted from ballistic simulations, and compared to an accurate analytical model.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo study of effective mobility in short channel FDSOI MOSFETs

Guarnay

Triozon

Martinie

et al. 2014

2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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Quasi-ballistic electron transport in ultrashort FDSOI devices is analyzed using Multi-Subband Monte Carlo (MSMC) simulations, taking into account the main scattering mechanisms: phonons, surface roughness, and charged impurities in the access regions. In particular, the ballistic resistance (defined as the resistance of the channel in absence of scattering) was extracted from ballistic simulations, and shown to be in good agreement with an accurate analytical model including the contact resistance effect. The simulations show an apparent mobility degradation when the channel length decreases, comparable to that observed in experiments, without requiring any additional scattering mechanism in order to explain it.

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Section: Introductionmentioning

confidence: 99%