Improved 320x244 - Element PtSi Schottky - Barrier IR-CCD Image Sensor

Shallcross, F. V.; Kosonocky, Walter F.; Villani, Thomas S.; Meray, Grazyna M.; O'Neill, J.

doi:10.21236/ada242026

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2014

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“…For BSI sensors, a technique to improve the QE is to use metal reflectors (Shallcross et al 1991). Figure 3 shows generation profiles inside 5um thick silicon sensor for (a) oxide-…”

Section: Introductionmentioning

confidence: 99%

A model to estimate QE/MTF of thinned, back-side illuminated image sensors

Ercan

Minoglou

2014

Opt Quant Electron

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An analytical model to estimate the quantum efficiency and the modulation transfer function of image sensors is proposed. Proposed approach follows similar prior studies, and tries to improve them in two directions: first, the impact of internal reflections on the optical generation profile is taken into account; second, the diffusion current calculations are extended for sensors utilizing graded-epi wafers and back-side passivation implants. A back-side illuminated photo diode sensor is used as a case study to demonstrate the model response.

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“…For BSI sensors, a technique to improve the QE is to use metal reflectors (Shallcross et al 1991). Figure 3 shows generation profiles inside 5um thick silicon sensor for (a) oxide-…”

Section: Introductionmentioning

confidence: 99%

A model to estimate QE/MTF of thinned, back-side illuminated image sensors

Ercan

Minoglou

2014

Opt Quant Electron

View full text Add to dashboard Cite

show abstract

Improved 320x244 - Element PtSi Schottky - Barrier IR-CCD Image Sensor

Cited by 1 publication

References 3 publications

A model to estimate QE/MTF of thinned, back-side illuminated image sensors

A model to estimate QE/MTF of thinned, back-side illuminated image sensors

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