A model to estimate QE/MTF of thinned, back-side illuminated image sensors

Ercan, Ali; Minoglou, K.

doi:10.1007/s11082-014-9989-9

Cited by 3 publications

(2 citation statements)

References 43 publications

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“…The high-intensity peak discernible at 365 nm originates from the upper Pt contacts, as previously observed for Au-Si-based devices [31]. Meanwhile, the slight shift in peak response from 365.29 to 365.45 is due to a structural change in the n-PSi layer.…”

Section: Photoluminescence Spectroscopysupporting

confidence: 71%

Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio

Thahe

Qaeed

Abdullah

et al. 2023

Journal of Nanomaterials

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Despite several attempts to enhance the electrical and charge carrier transport characteristics of porous silicon (PSi), the requisite conditions for optimally synthesizing n-PSi with appealing optoelectronic properties are yet to be achieved. Therefore, this research explores the effect of the chemical ratio of precursor materials (HF:C2H6O:H2O2) on the surface morphology, crystalline structure, and optical and electric properties of PSi. The PSi was produced by photoelectrochemical etching followed by anodization of the n-type Si under light illumination. The properties of the as-prepared PSi were studied by means of microscopic and spectroscopic techniques. The HF:C2H6O:H2O2 chemical ratio was optimized at 2 : 1 : 1. A metal–semiconductor–metal (MSM) ultraviolet photodetector (Pt/n-PSi/Pt) was fabricated, which exhibited high performances under UV light (365 nm) illumination. The photodetector was shown to be highly stable and reliable with a rapid rise time of 0.56 s at a bias voltage of +5 V. The MSM photodetector displayed responsivity (Rp) of 9.17 A/m at 365 nm, which significantly exceeds the values reported for TiC/porous Si/Si in some contemporary research. The photodetector fabricated from n-PSi, synthesized at an optimum chemical ratio (2 : 1 : 1) exhibited the best photodetection performance, possibly due to the high porosity and defect-free state of the n-PSi thin films.

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Section: Photoluminescence Spectroscopysupporting

confidence: 71%

Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio

Thahe

Qaeed

Abdullah

et al. 2023

Journal of Nanomaterials

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“…This approach is ultimately limited by either the saturation velocity of the holes, or the edgebreakdown of the silicon detector layer. While charges are drifting towards the electrodes, they also diffuse laterally, causing "cross-talk" between the pixels [22]. An over-bias will also reduce this effect.…”

Section: Detector Layer Design and Characterizationmentioning

confidence: 99%

A High Frame Rate Hybrid X-Ray Image Sensor

2015

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This paper describes a solid-state image sensor for high-speed X-ray imaging. The sensor is made up of a light sensitive detector layer bump-bonded to a readout integrated circuit (ROIC). The detector layer is high resistivity n-type silicon and is fully depleted in operation. The p-implanted islands are used to define pixel regions with 100-µm × 100-µm area. The detector layer contains 852 × 209 pixels indium bump-bonded to four identical CMOS ROICs. Each ROIC contains 213 × 209 pixels and is fabricated using a 0.25-µm CMOS process. The ROIC utilizes a capacitive transimpedance amplifier-type front-end coupled to a switched capacitor analog memory. This architecture allows storage of eight frames for high-speed burst imaging of up to a million frames per second, followed by a slower multiplexed readout. Details of the sensor design and operation are presented together with characterization results.Index Terms-High-speed image sensor, hybrid image sensor, X-ray sensor, ROIC, CMOS.

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Photo-electrochemically synthesized light emtting nanoporous silicon based UV photodetector: influence of current density

Thahe

Bidin

Hassan

et al. 2017

Mater. Res. Express

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Nanoporous silicon (n-PSi) with diverse morphologies was prepared on silicon (Si) substrate via photo-electrochemical etching technique. The role of changing current density (15, 30 and 45 mA cm−2) on the structure, morphology and optical properties was determined. As-prepared samples were systematically characterized using XRD, FESEM, AFM and photoluminescence measurements. Furthermore, the achieved n-PSi sample was used to make metal-semiconductormetal (MSM) UV photodetector. The performance of these photodetectors was evaluated upon exposing to visible light of wavelength 530 nm (power density 1.55 mW cm−2), which exhibited very high sensitivity of 150.26 with a low dark current. The achieved internal photoconductive gain was 2.50, the photoresponse peak was 1.23 A W−1 and the response time was 0.49 s and the recovery time was 0.47 s. Excellent attributes of the fabricated photodetectors suggest that the present approach may provide a cost effective and simple way to obtain n-PSi suitable for sundry applications.

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A model to estimate QE/MTF of thinned, back-side illuminated image sensors

Cited by 3 publications

References 43 publications

Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio

Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio

A High Frame Rate Hybrid X-Ray Image Sensor

Photo-electrochemically synthesized light emtting nanoporous silicon based UV photodetector: influence of current density

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