Improve the performance of CZTSSe solar cells by applying a SnS BSF layer

Omrani, MirKazem; Minbashi, Mehran; Memarian, Nafiseh; Kim, Dae-Hwan

doi:10.1016/j.sse.2017.12.004

Cited by 95 publications

(26 citation statements)

References 30 publications

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“…In the meantime, we comparatively investigate the effect of introducing the BSF layer in cells 3–5 with the BSF‐free device of cell 1. The impact of adding various BSF layers on different solar cells has already been reported by many groups …”

Section: Resultsmentioning

confidence: 68%

“…In addition, the effect of adding various back‐surface field (BSF) layers such as c‐Si, vanadium pentoxide (V 2 O 5 ), antimony telluride (Sb 2 Te 3 ), copper zinc tin sulfide (CZTS), copper zinc tin selenide (CZTSe), and tin sulfide (SnS) on the performance of different heterojunction solar cells has already been reported. More recently, it has been reported that the orthorhombic barium disilicide (β‐BaSi 2 ) can be applied as the best BSF layer for performance enhancement in CIGS‐based solar cells .…”

Section: Introductionmentioning

confidence: 99%

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Design and Simulation of FeSi₂‐Based Novel Heterojunction Solar Cells for Harnessing Visible and Near‐Infrared Light

Moon

Ali

Rahman

et al. 2020

Physica Status Solidi (a)

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Herein, three novel third‐generation (3G) solar cells: n‐Si/p‐FeSi2/p+‐Si, n‐Si/p‐FeSi2/p+‐BaSi2, and n‐CdS/p‐FeSi2/p+‐BaSi2 based on the orthorhombic iron disilicide (β‐FeSi2) absorber are demonstrated theoretically for multikilowatt photovoltaic (PV) systems and space applications. These cells overcome the complication of producing low voltages (≤450 mV) of FeSi2‐based solar cells due to the narrow bandgap (≈0.87 eV) of the absorber. Using crystalline silicon (c‐Si), cadmium sulfide (CdS), and orthorhombic barium disilicide (β‐BaSi2) as junction partners, effects of parameters such as the thickness, doping and defect densities, band offsets, and temperature are studied systematically by a solar cell capacitance simulator (SCAPS‐1D). The highest open‐circuit voltage of 958 mV is attained materially with a 300 nm thin absorber. This article renders the optimization of the PV parameters to improve the device performance with power conversion efficiencies (PCEs) of 28.18%, 31.61%, and 38.93% by the three novel npp+ approaches compared to the PCEs of 15.78% and 24.96% for the solar cells n‐Si/p‐FeSi2 and p‐Si/i‐FeSi2/n‐Si, respectively.

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Section: Resultsmentioning

confidence: 68%

Section: Introductionmentioning

confidence: 99%

Design and Simulation of FeSi₂‐Based Novel Heterojunction Solar Cells for Harnessing Visible and Near‐Infrared Light

Moon

Ali

Rahman

et al. 2020

Physica Status Solidi (a)

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“…It can be found that the minority carrier recombination current at back side and the total carrier recombination current in the proposed solar cell are comparatively lower than the reference cell. [ 50,78 ] Therefore, these results lead to suggest that the insertion of the SnS HTL between the absorber and the back metal contact would be effective to reduce the carrier recombination loss inside the Sb 2 Se 3 ‐based solar cell.…”

Section: Resultsmentioning

confidence: 97%

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Sunny

Ahmed

2021

Physica Status Solidi (b)

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This work reports a numerical investigation on the performance of Sb2Se3‐based thin‐film heterojunction solar cell using the solar cell capacitance simulator in 1D (SCAPS‐1D) program. Herein, inorganic tin sulfide (SnS) is introduced as a new hole transport material into the Sb2Se3 solar cell. The effects of several parameters such as thickness, doping, electron affinity, defect density, temperature, and resistances on the cell performances are analyzed. The proposed novel solar configuration that consists of Al/F:SnO2 (FTO)/CdS/Sb2Se3/SnS/Mo reveals the enhanced photovoltaic performances by means of reducing carrier recombination loss at back surface. At an optimized Sb2Se3 thickness of 1.0 μm, the efficiency is boosted from 24.01% to 29.89% by incorporating an ultrathin 0.05 μm SnS hole transport layer (HTL) into the Sb2Se3 solar cell. The performances of the proposed device are also evaluated by varying defects at CdS/Sb2Se3 and Sb2Se3/SnS interfaces. Moreover, it is found that electron affinity larger than 3.5 eV of HTL as well as back contact metal work function ≥4.9 eV should be considered to attain better performance. The simulated results lead to suggest that introducing the SnS material as a potential HTL candidate would be useful to develop low‐cost and highly efficient thin‐film solar cells.

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“…The minority carrier recombination loss can be lessened owing to reduction in barrier height for carriers at the absorber/back contact interface, thereby improving the cell performance. [ 29,30 ]…”

Section: Introductionmentioning

confidence: 99%

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

Sultana

Islam

Ahmed

2021

Physica Status Solidi (a)

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Herein, the widely available and cheapest cuprous oxide (Cu2O) as hole transport layer (HTL) is proposed to improve the performance of thin‐film copper indium gallium selenide (CIGS) solar cell. Solar Cell Capacitance Simulator in One Dimension (SCAPS‐1D) is utilized to design and study output characteristics of the modeled photovoltaic (PV) cell. A comparison between the proposed cell with Cu2O HTL and the reference CIGS solar cell is presented. The PV performances of CIGS solar cells are analyzed by changing thickness, carrier density and defects of different layers, operating temperatures, and recombination velocity at back contact. Optimal thicknesses of Cu2O HTL, CIGS absorber, cadmium sulfide (CdS) buffer, and the fluorine‐doped tin oxide (FTO) window layer are obtained to be 0.3, 0.8, 0.05, and 0.05 μm, respectively. Efficiency of 30.30% is achieved for the proposed CIGS PV device with Cu2O HTL. The simulated results imply that the proposed Cu2O as HTL can be used to show proficient and cost‐effective thin‐film CIGS PV cells.

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Improve the performance of CZTSSe solar cells by applying a SnS BSF layer

Cited by 95 publications

References 30 publications

Design and Simulation of FeSi₂‐Based Novel Heterojunction Solar Cells for Harnessing Visible and Near‐Infrared Light

Design and Simulation of FeSi₂‐Based Novel Heterojunction Solar Cells for Harnessing Visible and Near‐Infrared Light

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

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Improve the performance of CZTSSe solar cells by applying a SnS BSF layer

Cited by 95 publications

References 30 publications

Design and Simulation of FeSi2‐Based Novel Heterojunction Solar Cells for Harnessing Visible and Near‐Infrared Light

Design and Simulation of FeSi2‐Based Novel Heterojunction Solar Cells for Harnessing Visible and Near‐Infrared Light

Numerical Simulation and Performance Evaluation of Highly Efficient Sb2Se3 Solar Cell with Tin Sulfide as Hole Transport Layer

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu2O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

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Product

Resources

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Design and Simulation of FeSi₂‐Based Novel Heterojunction Solar Cells for Harnessing Visible and Near‐Infrared Light

Design and Simulation of FeSi₂‐Based Novel Heterojunction Solar Cells for Harnessing Visible and Near‐Infrared Light

Numerical Simulation and Performance Evaluation of Highly Efficient Sb₂Se₃ Solar Cell with Tin Sulfide as Hole Transport Layer

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension