Improve the Dynamic Breakdown Voltage of SOI LDMOS Devices by Eliminating the Effect of Deep Depletion in Substrate

Cai, Yu

doi:10.1109/aeees51875.2021.9403175

2021 3rd Asia Energy and Electrical Engineering Symposium (AEEES) 2021

DOI: 10.1109/aeees51875.2021.9403175

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Improve the Dynamic Breakdown Voltage of SOI LDMOS Devices by Eliminating the Effect of Deep Depletion in Substrate

Yu Cai¹

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Improve the Dynamic Breakdown Voltage of SOI LDMOS Devices by Eliminating the Effect of Deep Depletion in Substrate

Cited by 1 publication

References 11 publications

Analysis of Deep Depletion Effect in SOI LDMOS Substrate with Numerical Simulation

Analysis of Deep Depletion Effect in SOI LDMOS Substrate with Numerical Simulation

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