Important properties of transient thermal impedance for MOS-gated power semiconductors

Jakopović, Željko; Benčić, Zvonko; Kolonić, Fetah

doi:10.1109/isie.1999.798675

Cited by 30 publications

(28 citation statements)

References 5 publications

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“…This is also the typical value of threshold voltage temperature sensitivity in previous experiments [13].…”

Section: Threshold Voltage Temperature Sensitivitysupporting

confidence: 83%

“…For MOS based devices (MOSFET and IGBT), past research [13] and literature overview [14] suggest gate threshold voltage V th as the most appropriate TSEP for thermal resistance and transient thermal impedance measurements.…”

Section: Temperature Sensitive Electrical Pa-rameters (Tseps )mentioning

confidence: 99%

“…Threshold voltage temperature dependence curves were measured on IGBT modules and small cases (TO 220, TO 247) IGBTs [13]. The typical value of temperature sensitivity coefficient k T is −10 mV/K for IGBT modules and k T ∼ −8 mV/K for small cases IGBTs.…”

Section: Threshold Voltage Temperature Dependencecalibrationmentioning

confidence: 99%

See 2 more Smart Citations

Real-Time Measurement of IGBT's Operating Temperature

Bahun¹,

Čobanov²,

Jakopović

2011

Automatika

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Original scientific paperTemperature management and control are among the most critical functions in power electronic devices. Knowledge of power semiconductor's operating temperature is important for circuit design, as well as for converter control. Virtual junction temperature measurement or estimation is not an easy task, therefore designing the appropriate circuitry for virtual junction temperature in the real operating conditions not affecting regular circuit operation is a demanding task for engineers. The proposed method enables virtual junction temperature estimation based on the real-time measurement of semiconductor's quasi-threshold voltage using dedicated modified gate driver circuit.Key words: IGBT, Measurement, Threshold voltage, Temperature sensitive electrical parameter Mjerenje radne temperature IGBT-a u stvarnom vremenu. Upravljanje temperaturom je jedna od najkritični-jih funkcija kod učinskih poluvodičkih komponenata. Poznavanje radne temperature učinske poluvodičke sklopke vrlo je važno pri projektiranju sklopa, kao i za upravljanje učinskim pretvaračem. Mjerenje ili estimacija nadomjesne temperature silicija nije lagan zadatak, stoga je projektiranje odgovarajućeg sklopovlja za odreivanje nadomjesne temperature silicija u stvarnim radnim uvjetima, koje ne utječe na normalan rad sklopa, vrlo zahtjevan inžen-jerski zadatak. Predložena metoda omogućava odreivanje nadomjesne temperature silicija utemeljeno na mjerenju kvazi-napona praga u stvarnom vremenu pomoću posebno prilagoenog pobudnog stupnja IGBT-a.Ključne riječi: IGBT, mjerenje, napon praga, temperaturno osjetljiv električki parametar

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“…This is also the typical value of threshold voltage temperature sensitivity in previous experiments [13].…”

Section: Threshold Voltage Temperature Sensitivitysupporting

confidence: 83%

Section: Temperature Sensitive Electrical Pa-rameters (Tseps )mentioning

confidence: 99%

See 1 more Smart Citation

Real-Time Measurement of IGBT's Operating Temperature

Bahun¹,

Čobanov²,

Jakopović

2011

Automatika

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“…Compared to a Cauer-network, the Foster-network is easier to be extracted from TTICs using the curve fitting technique [33] [36], and easier to be implemented in DSP with less computational costs. This paper derives the Foster RC thermal model from measured TTICs using a cooling curve and a curve fitting technique.…”

Section: Real-time Temperature Estimatormentioning

confidence: 99%

Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

Chen¹,

Pickert

et al. 2014

IEEE Trans. Device Mater. Relib.

160

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Abstract-This paper presents a novel real-time power device temperature estimation method which monitors the power MOSFET's junction temperature shift arising from thermal aging effects and incorporates the updated electrothermal models of power modules into digital controllers. Currently, the real-time estimator is emerging as an important tool for active control of device junction temperature as well as on-line health monitoring for power electronic systems but its thermal model fails to address the device's ongoing degradation. Because of a mismatch of coefficients of thermal expansion between layers of power devices, repetitive thermal cycling will cause cracks, voids and even delamination within the device components, especially in the solder and thermal grease layers. Consequently, the thermal resistance of power devices will increase, making it possible to use thermal resistance (and junction temperature) as key indicators for condition monitoring and control purposes. In this paper, the predicted device temperature via threshold voltage measurements is compared with the real-time estimated ones and the difference is attributed to the aging of the device. The thermal models in digital controllers are frequently updated to correct the shift caused by thermal aging effects. Experimental results on three power MOSFETs confirm that the proposed methodologies are effective to incorporate the thermal aging effects in the power device temperature estimator with good accuracy. The developed adaptive technologies can be applied to other power devices such as IGBTs and SiC MOSFETs, and have significant economic implications.

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“…The selection of the most appropriate TSEP depends on the type of the device under test (DUT). A previous study [13] and literature overview [14] suggest that gate threshold voltage is the most appropriate TSEP for thermal resistance and transient thermal impedance measurements for metal−oxide semiconductor field-effect transistors (MOSFETs) and IGBTs. Threshold voltage as a TSEP represents the averaged channel region temperature.…”

Section: Tsepsmentioning

confidence: 99%

Estimation of Insulated-gate Bipolar Transistor Operating Temperature: Simulation and Experiment

Bahun¹,

Šunde²,

Jakopović³

2013

Journal of Power Electronics

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Knowledge of a power semiconductor's operating temperature is important in circuit design and converter control. Designing appropriate circuitry that does not affect regular circuit operation during virtual junction temperature measurement at actual operating conditions is a demanding task for engineers. The proposed method enables virtual junction temperature estimation with a dedicated modified gate driver circuit based on real-time measurement of a semiconductor's quasi-threshold voltage. A simulation was conducted before the circuit was designed to verify the concept and to determine the basic properties and potential drawbacks of the proposed method.

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Important properties of transient thermal impedance for MOS-gated power semiconductors

Cited by 30 publications

References 5 publications

Real-Time Measurement of IGBT's Operating Temperature

Real-Time Measurement of IGBT's Operating Temperature

Real-Time Temperature Estimation for Power MOSFETs Considering Thermal Aging Effects

Estimation of Insulated-gate Bipolar Transistor Operating Temperature: Simulation and Experiment

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