Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors

Hwang, Yu-Jin; Kim, Do Kyung; Jeon, Sang-Hwa; Wang, Ziyuan; Park, Jaehoon; Lee, Sin‐Hyung; Jang, Jaewon; Kang, In Man; Bae, Jin‐Hyuk

doi:10.3390/nano12183097

Cited by 3 publications

(2 citation statements)

References 35 publications

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“…The O 1s spectra were deconvoluted into three peaks to evaluate the chemical changes. The three peaks at 530.3, 531.0, and 531.9 eV represent metal oxide (M-O) bonds, oxygen vacancies (V O ), and metal hydroxyl (M-OH), respectively [22,23]. The M-O ratios of the ZTO thin films with Sn/(Sn+Zn) ratios of 0.3, 0.4, 0.5, and 0.6 are 60.04%, 63.18%, 59.98%, and 50.98%, respectively.…”

Section: Resultsmentioning

confidence: 99%

Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors

et al. 2022

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We investigate the physico-chemical origins that determine the transistor characteristics and stabilities in sol-gel processed zinc tin oxide (ZTO) thin-film transistors (TFTs). ZTO solutions with Sn/(Sn+Zn) molar ratios from 0.3 to 0.6 were synthesized to demonstrate the underlying mechanism of the electrical characteristics and bias-induced instabilities. As the Sn/(Sn+Zn) ratio of ZTO is increased, the threshold voltage of the ZTO TFTs negatively shifts owing to the gradual increase in the ratio of oxygen vacancies. The ZTO TFTs with an Sn/(Sn+Zn) ratio of 0.4 exhibit highest saturation mobility of 1.56 cm2/Vs lowest subthreshold swing and hysteresis of 0.44 V/dec and 0.29 V, respectively, due to the desirable atomic states of ZTO thin film. Furthermore, these also exhibit outstanding positive bias stability due to the low trap density at the semiconductor-dielectric interface. On the other hand, the negative bias stress-induced instability gradually increases as the proportion of tin increases because the negative bias stress instability originates from the ionization of oxygen vacancies. These results will contribute to the optimization of the composition ratio in rare-metal-free oxide semiconductors for next-generation low-cost electronics.

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Section: Resultsmentioning

confidence: 99%

Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors

et al. 2022

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“…Moreover, solution-processed oxide TFTs have been actively studied owing to their advantages of high scalability and throughput [ 21 , 22 , 23 ]. However, they have poorer electrical stabilities than those fabricated by conventional sputtering because of the high density of physical and chemical defects that are generated during fabrication [ 24 , 25 ]. Therefore, the relation between V TH and PBS stability must be further deduced.…”

Section: Introductionmentioning

confidence: 99%

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Na,

Park,

Park

et al. 2024

Nanomaterials

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The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial threshold voltage (VTH) and its origin were analyzed by understanding the roles of slow and fast traps in solution-processed oxide TFTs. To control the initial VTH of oxide TFTs, the indium oxide (InOx) semiconductor was doped with aluminum (Al), which functioned as a carrier suppressor. The concentration of oxygen vacancies decreased as the Al doping concentration increased, causing a positive VTH shift in the InOx TFTs. The VTH shift (∆VTH) caused by PBS increased exponentially when VTH was increased, and a distinct tendency was observed as the gate bias stress increased due to a high vertical electric field in the oxide dielectric. In addition, the recovery behavior was analyzed to reveal the influence of fast and slow traps on ∆VTH by PBS. Results revealed that the effect of the slow trap increased as the VTH moved in the positive direction; this occured because the main electron trap location moved away from the interface as the Fermi level approached the conduction band minimum. Understanding the correlation between VTH and PBS instability can contribute to optimizing the fabrication of oxide TFT-based circuits for electronic applications.

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Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

Park

Eun

et al. 2023

Nanomaterials

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The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-processable enhancement-mode amorphous oxide thin-film transistors (TFTs) using the solution process. A facile low-pressure annealing (LPA) method is proposed for the activation of indium oxide (InOx) semiconductors at a significantly low processing temperature of 200 °C. Thermal annealing at a pressure of about ~10 Torr induces effective condensation in InOx even at a low temperature. As a result, the fabricated LPA InOx TFTs not only functioned in enhancement mode but also exhibited outstanding switching characteristics with a high on/off current ratio of 4.91 × 109. Furthermore, the LPA InOx TFTs exhibit stable operation under bias stress compared to the control device due to the low concentration of hydroxyl defects.

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Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors

Cited by 3 publications

References 35 publications

Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors

Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

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