Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors

Wang, Ziyuan; Jeon, Sang-Hwa; Hwang, Yu-Jin; Lee, Sin‐Hyung; Jang, Jaewon; Kang, In Man; Kim, Do Kyung; Bae, Jin‐Hyuk

doi:10.3390/coatings12101534

Cited by 2 publications

(2 citation statements)

References 41 publications

(50 reference statements)

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“…The M-O increases from 38.0% to 45.2% through LPA. In general, in oxide semiconductors, hydroxyl acts as an acceptor-like trap and hinders electron conduction, while the M-O network provides an electron transport path through the overlap of metal s orbitals [23]. Therefore, it is necessary to minimize the M-OH and enhance the M-O network in the oxide semiconductor for high-performance electronic devices.…”

Section: Effect Of Lpa On Atomic Bonding State Of Inoxmentioning

confidence: 99%

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

Park

Eun

et al. 2023

Nanomaterials

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The interest in low processing temperature for printable transistors is rapidly increasing with the introduction of a new form factor in electronics and the growing importance of high throughput. This paper reports the fabrication of low-temperature-processable enhancement-mode amorphous oxide thin-film transistors (TFTs) using the solution process. A facile low-pressure annealing (LPA) method is proposed for the activation of indium oxide (InOx) semiconductors at a significantly low processing temperature of 200 °C. Thermal annealing at a pressure of about ~10 Torr induces effective condensation in InOx even at a low temperature. As a result, the fabricated LPA InOx TFTs not only functioned in enhancement mode but also exhibited outstanding switching characteristics with a high on/off current ratio of 4.91 × 109. Furthermore, the LPA InOx TFTs exhibit stable operation under bias stress compared to the control device due to the low concentration of hydroxyl defects.

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Section: Effect Of Lpa On Atomic Bonding State Of Inoxmentioning

confidence: 99%

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

Park

Eun

et al. 2023

Nanomaterials

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“…Solution-processed zinc-tin-oxide (ZnSnO) TFTs were widely investigated due to their excellent properties, such as a low-temperature synthesis process, simple fabrication, low cost, and resource sustainable ability [9][10][11]. However, oxygen vacancies have some negative effects on oxide films.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Stability of Solution-Processed Indium–Zinc–Tin–Oxide Transistors by Tantalum Cation Doping

Chen

et al. 2023

Coatings

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Highly stable metal oxide thin film transistors (TFTs) are required in high-resolution displays and sensors. Here, we adopt a tantalum cation (Ta5+) doping method to improve the stability of zinc–tin–oxide (ZnSnO) TFTs. The results show that Ta5+-doped TaZnSnO TFT with 1 mol% concentration exhibits excellent stability. Compared with the undoped device, the oxygen vacancy defects of TaZnSnO thin films reduce from 38.05% to 18.70%, and the threshold voltage shift (ΔVth) reduces from 2.36 to 0.71 V under positive bias stress. We attribute the improved stability to the effective suppression of the oxygen vacancy defects, which is confirmed by the XPS results. In addition, we also prepared TaInZnSnO TFT devices with 1 mol% Ta5+ doping concentration. Compared with the 1 mol% Ta5+-doped TaZnSnO TFTs, the μ increases two-fold from 0.12 to 0.24 cm2/Vs, and the Vth decreases from 2.29 to 0.76 V in 1 mol% Ta5+-doped TaInZnSnO TFT with an In:Zn:Sn ratio of 4:4:3, while the device remains highly stable with a ΔVth of only 0.90 V. The injection of Ta5+ provides a novel strategy for the enhancement of the stability in ZnSnO-based TFTs.

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Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors

Cited by 2 publications

References 41 publications

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing

Enhanced Stability of Solution-Processed Indium–Zinc–Tin–Oxide Transistors by Tantalum Cation Doping

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