2005
DOI: 10.1016/j.jcrysgro.2005.02.020
|View full text |Cite
|
Sign up to set email alerts
|

Importance of pulse reversal effect of CdSe thin films for optoelectronic devices

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

0
3
0

Year Published

2008
2008
2023
2023

Publication Types

Select...
10

Relationship

0
10

Authors

Journals

citations
Cited by 15 publications
(6 citation statements)
references
References 17 publications
0
3
0
Order By: Relevance
“…In the recent years, several numbers of studies were done on the novel properties of chalcogenide-based semiconductors (band gap between 1-3 eV) as they found applications in many optoelectronic devices [1][2][3]. In particular, Cadmium Selenide (CdSe) is a part of II-VI elemental group and leading semiconducting alloy due to its direct band gap (~ 1.74 eV at room temperature), good absorption ability, cost effective, p-type conductivity, and excellent photosensitivity [4]. At present, researchers are focused on the development of CdSe based photodetector due to its high performance of photo sensing capability under visible to near IR radiation [5].…”
Section: Introductionmentioning
confidence: 99%
“…In the recent years, several numbers of studies were done on the novel properties of chalcogenide-based semiconductors (band gap between 1-3 eV) as they found applications in many optoelectronic devices [1][2][3]. In particular, Cadmium Selenide (CdSe) is a part of II-VI elemental group and leading semiconducting alloy due to its direct band gap (~ 1.74 eV at room temperature), good absorption ability, cost effective, p-type conductivity, and excellent photosensitivity [4]. At present, researchers are focused on the development of CdSe based photodetector due to its high performance of photo sensing capability under visible to near IR radiation [5].…”
Section: Introductionmentioning
confidence: 99%
“…The spectacular expansion of CdSe films' use in scientific, technological, and industrial applications has been greatly aided by our growing understanding of their many features. The applications of CdSe, which is typically an n-type material, in this study include photoconductors [5], solar cells [6], thin film transistors [7,8], gas sensors [9], acousto optic devices [10], vidicones [11], photographic photoreceptors [12], etc. a glass substrate with thin layers.…”
Section: Introductionmentioning
confidence: 99%
“…5) Compared with other phases, CdSe hexagonal phase has higher stability and absorption coefficient. 6) Various methods were adopted for depositing the CdSe thin films, including pulsed-laser deposition, 7,8) spray pyrolysis, 9) chemical-bath deposition, 10) electrodeposition, 11) thermal evaporation 12) and radio-frequency magnetron-sputtering deposition. 13) However, the application of magnetron sputtering deposition can benefit from the accurate control of doping concentration and film thickness, forming uniform films and attaining a level of good repeatability.…”
Section: Introductionmentioning
confidence: 99%