Implementation of light extraction improvements of GaN-based light-emitting diodes with specific textured sidewalls

Chen, Chun‐Yen; Chen, Wei Cheng; Chang, Ching Hong; Lee, Yu Lin; Liu, Wen Chau

doi:10.1016/j.optlastec.2017.10.020

Cited by 9 publications

(3 citation statements)

References 23 publications

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“…The light generated in the QW is scattered by the V‐pit structure when it propagates to the boundary of the V‐pit layer. [ 51 ] The V‐pit sidewalls have an advantage in increasing the number of photon‐scattering events. The photons emitted from the MQW active region would have more opportunities to travel into the escape cone when V‐pits are used.…”

Section: Resultsmentioning

confidence: 99%

The Effect of Nanometer‐Scale V‐Pit Layer on the Carrier Recombination Mechanisms and Efficiency Droop of GaN‐Based Green Light‐Emitting Diodes

Jia

Wang

et al. 2021

Physica Status Solidi (a)

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The effects of nanometer‐scale V‐pits layer with different parameters on the carrier recombination mechanisms and efficiency droop of GaN‐based green light‐emitting diodes (LEDs) are investigated. Under optimized growth conditions, the threading dislocations (TDs) are surrounded by V‐pits layer with six (10–11) side wall facets. The V‐pits layer contains sidewall multiple quantum wells (MQWs) with bandgap several hundred millielectronvolts higher than that of c‐plane MQWs. This higher bandgap acts as a barrier for carriers and prevents them from reaching the dislocations, which can effectively suppress the nonradiative recombination. Analysis suggests that the V‐pits enhance hole injection into deeper MQWs, which is confirmed by the secondary ion mass spectroscopy profiles of Mg and Al. With the aid of the V‐pits layer, holes can be injected into deeper MQWs, which reduce the carrier concentration within individual QWs. Therefore, the Auger‐related efficiency droop can be suppressed. The results show that LED with 200 nm LT‐GaN + 40 nm n‐GaN V‐pits layer is able to deliver an improvement in the light output power by 189% as compared with reference LED without V‐pits layer. At 200 mA, the efficiency droop for LED with200 nm LT‐GaN + 40 nm n‐GaN V‐pits is 25.9%, which is much smaller than 34.7% for reference LED without V‐pits.

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Section: Resultsmentioning

confidence: 99%

The Effect of Nanometer‐Scale V‐Pit Layer on the Carrier Recombination Mechanisms and Efficiency Droop of GaN‐Based Green Light‐Emitting Diodes

Jia

Wang

et al. 2021

Physica Status Solidi (a)

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“…Moreover, GaN has gained much attention due to its potential applications in series of devices such as LEDs, short wavelength emitters or detectors, high power and high frequency electronic devices [47][48][49]. GaN based LEDs are widely applied in color displays, traffic lights, and solid state lighting [50][51][52]. GaN based semiconductors are highly promising for the fabrication of electronic devices including high electron mobility transistors [53], heterojunction bipolar transistors [54], UV Schottky barrier photodetectors (PDs) [55], and metal semiconductor metal (MSM) PD [56].…”

Section: Gan Propertiesmentioning

confidence: 99%

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Nahhas¹

2018

NANO

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This paper presents a review of recent advances of Gallium Nitride (GaN) and Zinc Oxide (ZnO) based hybrid structures materials and devices. GaN and ZnO have gained substantial interest in the research area of wide bandgap semiconductors due to their unique electrical, optical and structural properties. GaN and ZnO are important semiconductor materials with applications in blue and ultraviolet (UV) optoelectronics. Both materials have similar physical properties. GaN and ZnO as hybrid material have received much attention due to their unique potential applications. Several potential optical applications are being fabricated based on GaN and ZnO hybrid materials such as optical wave guide, light emitting diodes (LEDs), and laser diodes (LDs). The recent aspects of GaN and ZnO hybrid based devices are presented and discussed.

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“…These disadvantages restrict laser scribing to be an efficient approach to texturing the sidewall. ICP etching can generate various patterns on the sidewall by combining with lithography, which enables an evaluation of the influence of sidewall texture on light extraction [26]. But the plasma damage during ICP etching and sidewall contamination by etch products on the active layer induce a severe deterioration of forward and reverse voltage [27].…”

Section: Introductionmentioning

confidence: 99%

Insights Into the Influence of Sidewall Morphology on the Light Extraction Efficiency of Mini-LEDs

Tang

Miao

Liu³

et al. 2019

IEEE Photonics J.

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We systemically investigated the influence of sidewall morphology change based on TMAH etching on the optical performance of mini-LEDs. The dominant feature of prism structures on the sidewall of mini-LEDs with TMAH etching treatment varied from inhomogeneous to homogeneous as the TMAH etching time prolonged. Such prism structures only appeared on the sidewall along direction owing to the anisotropic TMAH etching. Experimental and simulation results demonstrated that these prism structures can effectively improve the light extraction from sidewall and homogenous prism structures on the sidewall function better in out-coupling light.

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Implementation of light extraction improvements of GaN-based light-emitting diodes with specific textured sidewalls

Cited by 9 publications

References 23 publications

The Effect of Nanometer‐Scale V‐Pit Layer on the Carrier Recombination Mechanisms and Efficiency Droop of GaN‐Based Green Light‐Emitting Diodes

The Effect of Nanometer‐Scale V‐Pit Layer on the Carrier Recombination Mechanisms and Efficiency Droop of GaN‐Based Green Light‐Emitting Diodes

Review of GaN/ZnO Hybrid Structures Based Materials and Devices

Insights Into the Influence of Sidewall Morphology on the Light Extraction Efficiency of Mini-LEDs

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