Implementation of Electron–Phonon Scattering in a CNTFET Compact Model

Fregonèse, Sébastien; Goguet, Johnny; Maneux, Cristell; Zimmer, Thomas

doi:10.1109/ted.2009.2017647

Cited by 24 publications

(5 citation statements)

References 16 publications

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“…Also, we compare our results with available experimental data. The electron scattering parameters used for the calculations are listed in Table I [19]. In contrast to the model A, mfp λ ac = 450 nm is about twice less than λ ac = 963 nm used in the BTE calculations.…”

Section: Resultsmentioning

confidence: 99%

“…In a simplified model, the probability for electrons depending on energy has only two different constant values T ac and T high , which are defined by ( 4) with modified l ef f [19]. The transmission probability T ac of low energy electrons scattered only by acoustic phonons is defined in terms of l ef f = l ac = λ ac / 1 + qE g /(αk B T ).…”

Section: Cntfet Transport Modelmentioning

confidence: 99%

“…The transmission probability T ac of low energy electrons scattered only by acoustic phonons is defined in terms of l ef f = l ac = λ ac / 1 + qE g /(αk B T ). Parameter α is equal to 1.83 for a range of temperature from 200 K to 400 K and for a range of chirality from (13,0) to (25,0) [19]. In this approach, the electron density of states is replaced by its average value and Pauli's exclusion principle is neglected.…”

Section: Cntfet Transport Modelmentioning

confidence: 99%

“…Using the step-like approximation for the transmission probability as discussed in the above mentioned simplified model, the integral in (1) can be solved analytically. In this model, the source and drain components of electric current read [19]…”

Section: A Model Amentioning

confidence: 99%

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Electron back scattering in CNTFETs

Bejenari,

Claus

2015

Preprint

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A new non-ballistic analytical model for the intrinsic channel region of MOSFET-like single-walled carbon-nanotube field-effect transistors with ohmic contacts has been developed which overcomes the limitations of existing models and extends their applicability toward high bias voltages needed for analog applications. The new model comprises an improved description of electron-phonon scattering mechanism taking into account the accumulation of electrons at the bottom of conduction subband due to back scattering by optical phonons. The model has been justified by a Boltzmann transport equation solver. The simulation results are found to be in agreement with experimental data for highly doped CNTFETs.

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Section: Resultsmentioning

confidence: 99%

Section: Cntfet Transport Modelmentioning

confidence: 99%

Section: Cntfet Transport Modelmentioning

confidence: 99%

Section: A Model Amentioning

confidence: 99%

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Electron back scattering in CNTFETs

Bejenari,

Claus

2015

Preprint

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“…Recently, the device dc and ac characteristics of graphene nanoribbon and graphene bilayer FETs (which are referred to as GNR-FETs and GBL-FETs, respectively) were assessed both numerically and analytically [12][13][14][15][16][17][18][19]. The device characteristics of GNR-FETs operating in near ballistic and drift-diffusion regimes can be calculated analogously with those of nanowire-and carbon nanotube-FETs (see, for instance [20][21][22] and references therein). The GBL-FET characteristics can, in principle, be found using the same approaches as those realized previously for more customary FETs with a twodimensional electron system in the channel [23-25, 27?…”

Section: Introductionmentioning

confidence: 99%

Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation

Ryzhii

Satou

et al. 2011

Journal of Applied Physics

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We develop an analytical device model for graphene bilayer field-effect transistors (GBL-FETs) with the back and top gates. The model is based on the Boltzmann equation for the electron transport and the Poisson equation in the weak nonlocality approximation for the potential in the GBL-FET channel. The potential distributions in the GBL-FET channel are found analytically. The source-drain current in GBL-FETs and their transconductance are expressed in terms of the geometrical parameters and applied voltages by analytical formulas in the most important limiting cases. These formulas explicitly account for the short-gate effect and the effect of drain-induced barrier lowering. The parameters characterizing the strength of these effects are derived. It is shown that the GBL-FET transconductance exhibits a pronounced maximum as a function of the top-gate voltage swing. The interplay of the short-gate effect and the electron collisions results in a nonmonotonic dependence of the transconductance on the top-gate length.

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Compact modeling of optically gated carbon nanotube field effect transistor

Liao¹,

Maneux²,

Pouget³

et al. 2010

Physica Status Solidi (b)

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BackgroundCarbon Nanotube Field Effect Transistors (CNTFETs) have high charge sensitivity at room temperature [1]. By using this sensitivity, some nonvolatile memory devices have been demonstrated with charge trapping in SiO 2 gate insulator [2,3]. Besides, a new design of synapse-like circuit requires a multi-level nonvolatile memory [4]. For this application, and according to its high charge sensitivity, Optically-Gated Carbon Nanotube Field Effect Transistor (OG-CNTFET) appears as a good candidate thanks to optical writing and electrical erasing abilities both with single and multiple drain current levels [5,6].By coating a thin layer of photosensitive polymer such as poly3-octylthiophene-2,5-diyl (P3OT) over the nanotube, a CNTFET becomes an OG-CNTFET [5], as presented in Fig. 1a. Compared to the conventional CNTFET, the OG-CNTFET reveals a significant increase of the drain current below the threshold gate bias voltage. If this device is under significant powerful illumination, the gate bias will no longer control the conductivity of the CNT channel, and the optical gate will dominate the functionality. This property of variable conductance is of particular interest for neural network designs to define a third logic level. In this work, we present a compact model for OG-CNTFET. Indeed, compact modeling (i.e. SPICE-like) is a key issue for predicting the ultimate performances of these novel nano-devices in a circuit environment using standard simulation tools.Electron trapping/releasing mechanism When a thin film of P3OT coats on a CNTFET, this polymer acts as a p-type doping under no illumination condition [5]. We suppose that the CNT channel is electrostatically doped due to negative charges trapped at the polymer/SiO 2 interface in the nanotube vicinity [1].When an OG-CNTFET is under illumination with a wavelength that can be absorbed by the polymer, electron-hole pairs are generated in the P3OT layer, and a minor part of them can be separated [7]. This polymer is known for trapping only electrons [8]. If the gate is biased positively, these trapped electrons can be homogenously attracted by the electrostatic field to the P3OT/SiO 2 interface. The resulting charge density contributes to modulate the channel conductivity by screening the back gate bias. Fig. 1b describes this so-called optical gating effect. When the light is turned off, the trapped electrons are not released immediately; they are hold for about ten hours [5,7].The optical gating effect can be removed more rapidly by applying a negative gate voltage or a positive drain-source one [5-6, 9]. The negative gate bias provides an electrostatic field that contributes to release the trapped electrons at the P3OT/SiO 2 interface. Concerning the effect of the positive V ds , we assume that it creates an electric field close to the drain electrode that contributes to sweep away the trapped carriers according to the field magnitude distribution as a function of the distance to the drain electrode (c.f. Fig. 1c). Modeling of OG-CNTFETSince the OG-CNTFET...

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Implementation of Electron–Phonon Scattering in a CNTFET Compact Model

Cited by 24 publications

References 16 publications

Electron back scattering in CNTFETs

Electron back scattering in CNTFETs

Analytical device model for graphene bilayer field-effect transistors using weak nonlocality approximation

Compact modeling of optically gated carbon nanotube field effect transistor

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