Implementation of a CMOS LNA plus mixer for GPS applications with no external components

Svelto, F.; Deantoni, S.; Montagna, G.; Castello, R.

doi:10.1109/92.920823

Cited by 32 publications

(11 citation statements)

References 5 publications

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“…The NF at L1 frequency of 1,575.42 MHz is about 1.68 dB and that of L5 frequency of 1,176.45 MHz is 1.67 dB. These NF characteristics of proposed concurrent LNA are comparable or lower than that of recently published single band LNA [4,5,6,7]. when only at a single frequency, the input impedances of the LNA is optimized for low NF, then the NFs are reduced to 1.4 and 1.17 dB, respectively, more than 0.3 dB compared to those of simultaneous SNIM matched results.…”

Section: Experiments Resultsmentioning

confidence: 66%

A 5.4mW concurrent low noise CMOS LNA for L1/L5 GPS application

Kim

Baek

2009

IEICE Electron. Express

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Abstract:In this paper, a concurrent CMOS LNA for GPS application is presented, which supports L1 and L5 only modes as well as L1 and L5 simultaneous mode. To achieve concurrent operation, new cascode configuration employing a single common-source input stage and two common-gate output stages is proposed. And the band-pass matching technique using two capacitor banks is applied to achieve gain and output return loss tunability. It is implemented using 0.13 μm CMOS technology. The LNA achieved low noise figures of 1.68 and 1.67 dB with high gains of 15.7 dB and 16.7 dB at L1 and L5 band, respectively and showed more than 10 dB input and output return losses. The LNA chip consumes low current of 4.5 mA from 1.2 V supply.

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Section: Experiments Resultsmentioning

confidence: 66%

A 5.4mW concurrent low noise CMOS LNA for L1/L5 GPS application

Kim

Baek

2009

IEICE Electron. Express

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“…The core schematic diagram of the LNA is shown in Fig.1. It has been shown that the input stage which allows us to achieve the minimum noise figure, match the input impedance, and maximize the transconductance gain is the inductively degenerated NMOS input stage in its single-end form [4] . In fact, this topology allows us to achieve real input impedance for the Bluetooth narrowband signal to get ride of out-of-band blocks.…”

Section: Lna Corementioning

confidence: 99%

A 0.18μm CMOS gain-switched LNA and mixer with large dynamic range

Yang

Xue

2008

J. Electron.(China)

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A 2.4GHz 0.18μm CMOS gain-switched single-end Low Noise Amplifier (LNA) and a passive mixer with no external balun for near-zero-IF (Intermediate Frequency)/RF (Radio Frequency) applications are described. The LNA, fabricated in the 0.18μm 1P6M CMOS technology, adopts a gain-switched technique to increase the linearity and enlarge the dynamic range. The mixer is an IQ-based passive topology. Measurements of the CMOS chip are performed on the FR-4 PCB and the input is matched to 50 .Ω Combining LNA and mixer, the front-end measured performances in high gain state are: -15dB of S11, 18.5dB of voltage gain, 4.6dB of noise figure, -15dBm of IIP3, -85dBm to -10dBm dynamic range. The full circuit drains 6mA from a 1.8V supply.

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“…The input impedance of the MOS Manuscript version of circuit shown in Fig. 1(a) with pad or package parasitics has been analyzed in [7], [8], and [13], but analytical expressions for the input stage transconductance, noise figure (NF), or voltage gain have not been given. In [9], the NF and gain of the MOS LNA with parasitics are also analyzed, but in the case of nonperfect impedance match at the LNA input.…”

Section: Analysis Of Packaging Effects and Optimizationmentioning

confidence: 99%

Analysis of packaging effects and optimization in inductively degenerated common-emitter low-noise amplifiers

Sivonen

Kangasmaa

Pärssinen

2003

IEEE Trans. Microwave Theory Techn.

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The effects of packaging on the performance of inductively degenerated common-emitter low-noise amplifiers (LNAs) are examined and the equations describing the input impedance, transconductance, voltage gain, and noise figure of the packaged amplifier are derived. From the equations, several guidelines for the LNA design are obtained and a systematic approach for the LNA design can be derived. Furthermore, by applying the formulas, the performance of the amplifier can be readily estimated and optimized in the very early stage of the circuit design, immediately as the process data is available. The measurement results of the implemented 0.35-m SiGe RF front-end with an inductively degenerated common-emitter LNA at 1.575 GHz agree well with calculations and simulations.

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Implementation of a CMOS LNA plus mixer for GPS applications with no external components

Cited by 32 publications

References 5 publications

A 5.4mW concurrent low noise CMOS LNA for L1/L5 GPS application

A 5.4mW concurrent low noise CMOS LNA for L1/L5 GPS application

A 0.18μm CMOS gain-switched LNA and mixer with large dynamic range

Analysis of packaging effects and optimization in inductively degenerated common-emitter low-noise amplifiers

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