Implantation Profiles of Buried Layers (MOS pn) from HF or LFC(U) Curves

Abstract

The doping profile of a buried layer is determined by MOS capacitance measurements. Two ways are offered: (i) for HF conditions, the p‐n junction and impedance contributions of the lateral channel outside the dot area have to be taken into account, (ii) for LF conditions, an appropriate fitting procedure has to be developed. The agreement with SUPREM data is good in either case.