Impedance Spectroscopy of Nanostructure p-ZnGa₂Se₄/n-Si Heterojunction Diode

Abstract

The impedance characteristics of the nanostructure p-ZnGa2Se4/n-Si heterojunction diode were investigated by impedance spectroscopy method in the temperature range (303-503 K) and the frequency range (42 Hz -5 MHz). The real and imaginary parts of the complex impedance are changed with the frequency. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The Cole-Cole plots under various temperatures exhibit one relaxation mechanism. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation.

Hydrothermal synthesis and electrical properties of NaNbO3

“…At higher frequencies all the curves merge together for all temperature which is explained by space charge polarization of the material [39][40][41]. At lower frequencies the value of Z 0 decreases with increasing temperature which indicates the presence of negative temperature coefficient of resistance (NTCR) type behavior in r-NaNbO 3 [42,43]. Fig.…”

On impedance spectroscopy analysis of nonideal heterojunctions

“…The spectral distributions of the real Z m and imaginary Z m parts of the measured impedance of the simulated heterojunction are shown in figures 5 and 6, respectively, in semilogarithmic coordinates (as they are usually plotted [22,24,27,28]). One can see that the shape of the spectral It should be emphasized that the measured impedance of the heterojunction in the presence of interface traps (curves 2 in figures 4-6) can be easily analyzed in terms of the simplified equivalent circuit (figure 3).…”

“…L is the parasitic inductance of a heterojunction with its electrical leads. measured impedance and admittance [22][23][24]. In spite of the clear evidence of high interface trap density, the analysis of the impedance spectra was carried out in the scope of the simple equivalent circuit (a parallel resistor and capacitor in series with a resistor), which does not take into account the presence of interface traps and parasitic inductance.…”

Оценка жизнеспособности одиночных клеток и клеточных популяций in vitro с помощью импедансной спектроскопии во временном представлении

“…Электрическая импедансная спектроскопия (ЭИС) [1,2] является мощной экспериментальной методикой, которая используется для диагностики электронных приборов [3][4][5], в исследовании твердого тела и наноматериалов [6][7][8][9], при изучении электролитов [10][11][12], для характеризации альтернативных источников энергии [13][14][15] и во многих других областях науки и техники. В последнее время все большую популярность приобретают исследования, направленные на применение ЭИС для изучения " мягкой материи" (soft matter), к которой относятся биологические объекты: органы, ткани, клетки, белки и т.д.…”