Impedance spectroscopy at semiconductor electrodes: Review and recent developments

Gomes, W. P.; Vanmaekelbergh, D.

doi:10.1016/0013-4686(95)00427-0

Cited by 230 publications

(121 citation statements)

References 42 publications

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“…For example, frequency dispersion in MS plots is often observed low frequencies. This has been attributed to non-idealities such as roughness of the samples, relaxation of the dielectric constant in the space charge region, and surface trapping states, [129] and explains the preferential use of high frequency to determine the sample capacitance. In addition, MS plots of hematite photoanodes have exhibited large deviations from linearity when V b @ V fb .…”

Section: Advanced Understanding By Using Electrochemical Impedance Spmentioning

confidence: 99%

Solar Water Splitting: Progress Using Hematite (α‐Fe₂O₃) Photoelectrodes

2011

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Photoelectrochemical (PEC) cells offer the ability to convert electromagnetic energy from our largest renewable source, the Sun, to stored chemical energy through the splitting of water into molecular oxygen and hydrogen. Hematite (α-Fe(2)O(3)) has emerged as a promising photo-electrode material due to its significant light absorption, chemical stability in aqueous environments, and ample abundance. However, its performance as a water-oxidizing photoanode has been crucially limited by poor optoelectronic properties that lead to both low light harvesting efficiencies and a large requisite overpotential for photoassisted water oxidation. Recently, the application of nanostructuring techniques and advanced interfacial engineering has afforded landmark improvements in the performance of hematite photoanodes. In this review, new insights into the basic material properties, the attractive aspects, and the challenges in using hematite for photoelectrochemical (PEC) water splitting are first examined. Next, recent progress enhancing the photocurrent by precise morphology control and reducing the overpotential with surface treatments are critically detailed and compared. The latest efforts using advanced characterization techniques, particularly electrochemical impedance spectroscopy, are finally presented. These methods help to define the obstacles that remain to be surmounted in order to fully exploit the potential of this promising material for solar energy conversion.

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Section: Advanced Understanding By Using Electrochemical Impedance Spmentioning

confidence: 99%

Solar Water Splitting: Progress Using Hematite (α‐Fe₂O₃) Photoelectrodes

2011

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“…5, proposed by Gomes and Vanmaekelbergh [18,19], to account for the impedance behaviour of crystalline SC/El interface in presence of electron charge transfer and/or recombination of electrons and holes trough surface states. Both processes could occur in the different potential regions where EIS spectra were obtained and by considering that the differential admittance measurements were performed in a very wide region of electrode potential, from the formation voltage, U F , close to the estimated V fb potential, so encompassing the HBB and LBB regime.…”

Section: Choice Of the Equivalent Circuit Of A-sc/el Interfacementioning

confidence: 99%

Physicochemical characterization of passive films on niobium by admittance and electrochemical impedance spectroscopy studies

Quarto¹,

Mantia²,

Santamaria³

2005

Electrochimica Acta

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An analysis of the electronic properties of amorphous semiconductor-electrolyte junction is reported for thin (D ox < 20 nm) passive film grown on Nb in acidic electrolyte. It will be shown that the theory of amorphous semiconductor-electrolyte junction (a-SC/El) both in the low band-bending and high band-bending regime is able to explain the admittance data of a-Nb 2 O 5 /El interface in a large range (10 Hz-10 kHz) of frequency and electrode potential values.A modelling of experimental EIS data at different potentials and in the frequency range of 0.1 Hz-100 kHz is presented based on the theory of amorphous semiconductor and compared with the results of the fitting of the admittance data obtained in a different experiment. Some preliminary insights on the possible dependence of the density of state (DOS) distribution on the mobile defects concentration and mechanism of growth of anodic film on valve metals are suggested.

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“…[5] This Mott-Schottky approach is also taken when a Schottky barrier is formed at the interface of the semiconductor film and electrolyte to monitor the carrier concentrations of the semiconductor electrodes. [8][9][10] C-V …”

mentioning

confidence: 99%

“…[8] The total value of the air capacitances of the device can be estimated using their configuration and dimensions in the device; their typical value is on the order of 10 -11 F. Moreover, the air resistance (R air ) is suggested to be much larger than the R sh of the p ++ -Si/n-ZnO nanorod junctions according to the I-V measurements. As shown in Figure 3a, fitting results with small fit- ting errors can be obtained using the equivalent circuit illustrated in Figure 3b when the values of CPE air and R air are set to ca.…”

mentioning

confidence: 99%

Fabrication and Impedance Analysis of n‐ZnO Nanorod/p‐Si Heterojunctions to Investigate Carrier Concentrations in Zn/O Source‐ Ratio‐Tuned ZnO Nanorod Arrays

Wong

2007

Advanced Materials

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Determination of the electrical properties of 1D semiconductor nanostructures is important for material and growth process development as well as for further nanodevice design. Gate-dependent electrical-transport measurements of singlenanowire field-effect transistors (FETs) have been employed to investigate the electrical-transport properties of semiconductor nanowires.[ Apart from the Hall effect measurement for thin-film semiconductor materials, the capacitance-voltage (C-V) measurement is an alternative method of determining the doping concentrations in semiconductors. [5][6][7] Schottky or pn junctions, in which one side of the junction is much more heavily doped than the other side, are employed for C-V analysis. A fixed dc reverse bias with a small ac voltage superimposed on it is applied to the sample to measure the junction capacitance at a fixed frequency. The inverse capacitance squared is a linear function of the applied reverse-biased voltage; from this the built-in potential of the junction and the carrier concentration of the lightly doped side can be estimated from the intercept and the slope, respectively. [5] This Mott-Schottky approach is also taken when a Schottky barrier is formed at the interface of the semiconductor film and electrolyte to monitor the carrier concentrations of the semiconductor electrodes. [8][9][10] C-V

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Impedance spectroscopy at semiconductor electrodes: Review and recent developments

Cited by 230 publications

References 42 publications

Solar Water Splitting: Progress Using Hematite (α‐Fe₂O₃) Photoelectrodes

Solar Water Splitting: Progress Using Hematite (α‐Fe₂O₃) Photoelectrodes

Physicochemical characterization of passive films on niobium by admittance and electrochemical impedance spectroscopy studies

Fabrication and Impedance Analysis of n‐ZnO Nanorod/p‐Si Heterojunctions to Investigate Carrier Concentrations in Zn/O Source‐ Ratio‐Tuned ZnO Nanorod Arrays

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Impedance spectroscopy at semiconductor electrodes: Review and recent developments

Cited by 230 publications

References 42 publications

Solar Water Splitting: Progress Using Hematite (α‐Fe2O3) Photoelectrodes

Solar Water Splitting: Progress Using Hematite (α‐Fe2O3) Photoelectrodes

Physicochemical characterization of passive films on niobium by admittance and electrochemical impedance spectroscopy studies

Fabrication and Impedance Analysis of n‐ZnO Nanorod/p‐Si Heterojunctions to Investigate Carrier Concentrations in Zn/O Source‐ Ratio‐Tuned ZnO Nanorod Arrays

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Resources

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Solar Water Splitting: Progress Using Hematite (α‐Fe₂O₃) Photoelectrodes

Solar Water Splitting: Progress Using Hematite (α‐Fe₂O₃) Photoelectrodes