Fabrication and Impedance Analysis of n‐ZnO Nanorod/p‐Si Heterojunctions to Investigate Carrier Concentrations in Zn/O Source‐ Ratio‐Tuned ZnO Nanorod Arrays

Abstract

Determination of the electrical properties of 1D semiconductor nanostructures is important for material and growth process development as well as for further nanodevice design. Gate-dependent electrical-transport measurements of singlenanowire field-effect transistors (FETs) have been employed to investigate the electrical-transport properties of semiconductor nanowires.[ Apart from the Hall effect measurement for thin-film semiconductor materials, the capacitance-voltage (C-V) measurement is an alternative method of determining the doping concentrations in semiconductors. [5][6][7] Schottky or pn junctions, in which one side of the junction is much more heavily doped than the other side, are employed for C-V analysis. A fixed dc reverse bias with a small ac voltage superimposed on it is applied to the sample to measure the junction capacitance at a fixed frequency. The inverse capacitance squared is a linear function of the applied reverse-biased voltage; from this the built-in potential of the junction and the carrier concentration of the lightly doped side can be estimated from the intercept and the slope, respectively. [5] This Mott-Schottky approach is also taken when a Schottky barrier is formed at the interface of the semiconductor film and electrolyte to monitor the carrier concentrations of the semiconductor electrodes. [8][9][10] C-V

Photoelectrochemical Study of Nanostructured ZnO Thin Films for Hydrogen Generation from Water Splitting

“…The dimensionality of metal oxides has also been widely investigated for 0D, 1D and 2D nanostructures. [23][24][25][26][27] Colloidal wet chemistry, chemical vapor deposition (CVD) and magnetron sputtering have proven versatile in the creation of metal oxides with nanometersized features. [23,[28][29][30][31] It has been found that the charge transport properties of metal oxide nanoparticles-and nanorod-based PEC cells are superior to those of traditional metal oxide thin film cells.…”

Electrodeposition and impedance spectroscopy characterization of ZnO nanowire arrays

“…The particular morphology of nanowire arrays makes their electrical characterization difficult. Very recently several methods employing impedance spectroscopy have been developed to determine donor density of ZnO nanowire arrays [19,29]. The electrochemical impedance spectroscopy, establishing a semiconductor/liquid junction, presents the advantage that it is a non-destructive method and no-solid contact is needed as backcontact [19].…”

ZnO Nanostructures: Toxicity and Phototoxicity Characteristics in Biological Samples

“…ZnO can function in a variety of practical applications, including optoelectronic devices, e.g., UV sensors [31], solar cells [41], and LEDs [40,42]. Several approaches, including very sophisticated and expensive deposition technique such as metal organic chemical vapor deposition (MOCVD) [43], and sputter deposition techniques [44], have been used to synthesize ZnO NRs. These methods are of batch type and difϐicult to scale up for large-volume production.…”