2019
DOI: 10.1109/tdmr.2019.2937789
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Impacts of Process and Temperature Variations on the Crosstalk Effects in Sub-10 nm Multilayer Graphene Nanoribbon Interconnects

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Cited by 27 publications
(7 citation statements)
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“…Consequently, as the resistance is the dominant factor in determining the number and size of repeaters (see Eqs. [15][16][17][18][19][20], the MLGNR interconnect has a smaller N opt and a greater S opt .…”
Section: Results and Analysismentioning
confidence: 99%
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“…Consequently, as the resistance is the dominant factor in determining the number and size of repeaters (see Eqs. [15][16][17][18][19][20], the MLGNR interconnect has a smaller N opt and a greater S opt .…”
Section: Results and Analysismentioning
confidence: 99%
“…The critical physical parameters of the interconnects and CNTFETs considered for the Monte Carlo simulations, along with their nominal values and variations, are given in Table VI. 19,49 It is noteworthy that to have more fair and precise evaluations and comparisons, we have considered the process parameters common between MWCNT and MLGNR interconnects. The maximum variations of the delay and PDP of the interconnects with 1000 μm length in the presence of all process variations are shown in Figs.…”
Section: Results and Analysismentioning
confidence: 99%
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“…The interconnection lines used in integrated circuit design increase the delay, noise, and power consumption of the system, so circuit interconnection has become one of the essential indicators to judge the performance of integrated circuit systems. [1] There are only two logic states of '0' and '1' in traditional binary logic. Multi-valued logic is extended from binary logic, referring to the logic that the number of the logic values is greater than 2.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, the traditional copper wires have faced many critical challenges in deep nanoscale nodes such as surface scattering, grain boundaries, dishing and erosion effects, high-power density, and electromigration. 2 Utilizing promising emerging nanodevices such as carbon nanotube field-effect transistors (CNTFETs) 1,3 and interconnects such as carbon nanotube (CNT) and graphene nanoribbon (GNR) can address the critical issues of modern chips in sub-10nm nodes. 2,4,5 Single-walled carbon nanotube (SWCNT) consists of a single cylindrical sheet of graphene and is commonly used as the channel region in CNTFETs.…”
mentioning
confidence: 99%