Impacts of LaOx Doping on the Performance of ITO/Al2O3/ITO Transparent RRAM Devices

Han, Guodu; Chen, Yanning; Liu, Hongxia; Wang, Dong; Qiao, Rundi

doi:10.3390/electronics10030272

Cited by 8 publications

(5 citation statements)

References 31 publications

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“…The linear distribution in the ln( I ) – V 1/2 plot verifies that HRS follows Schottky conduction. [ 40 , 41 , 42 ] Such conduction mechanisms of LRS and HRS represent the mechanism of oxygen vacancy‐based resistive switching memory.…”

Section: Resultsmentioning

confidence: 99%

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer

et al. 2022

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In this study, a different number of indium zinc oxide (IZO) interlayers are fabricated into Al 2 O 3 ‐based transparent resistive switching memory on a transparent indium tin oxide (ITO)/glass substrate at room temperature. Al 2 O 3 /IZO multilayer transparent memory has a transmittance of at least 65% in the wavelength range of 400–900 nm. In addition, the Al 2 O 3 /IZO multilayer transparent memory can achieve an electroforming voltage that is 35.7% lower than that of ITO/pure‐Al 2 O 3 /IZO transparent memory. The fabricated Al 2 O 3 /IZO multilayer transparent memory exhibits typical bipolar resistive switching behavior, regardless of the number of IZO interlayers. Also, the fabricated Al 2 O 3 /IZO multilayer transparent memory has a low operating voltage within ±1.5 V. In addition, a flexible Al 2 O 3 /IZO multilayer transparent memory is fabricated using the same process on ITO‐coated polyethylene terephthalate. The fabricated flexible transparent memory also maintains the resistive switching characteristics during the bending state.

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Section: Resultsmentioning

confidence: 99%

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer

et al. 2022

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“…It has been proposed that locally controlled impurities within the dielectric layer aid in the formation of conductive filaments (CF). Recent studies have shown the positive effects of doping of the dielectric [8][9][10][11] or adding nanodots [6], particles [12], crystals [13], even nanoislands [14] and graphene [15] to the dielectric layer, lowering the SET/RESET voltages of RRAMs, increasing endurance, and helping guide the formation of conductive filaments. Recently, Wang et al [12] have even proposed the mechanism of a hybrid conductive filament, combining metal and oxygen vacancies-based models, brought about by the addition of a Ag and Cu nanoparticle layer.…”

Section: Introductionmentioning

confidence: 99%

Bipolar Resistive Switching in Hafnium Oxide-Based Nanostructures with and without Nickel Nanoparticles

et al. 2022

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As research into additives and intentionally introduced impurities in dielectric thin film for enhancing the resistive switching based random access memories (RRAM) continues to gain momentum, the aim of the study was to evaluate the effects of chemically presynthesised Ni nanoparticles (NPs) embedded in a dielectric layer to the overall structure and resistive switching properties. HfO2-based thin films embedded with Ni NPs were produced by atomic layer deposition (ALD) from tetrakis(ethylmethylamino)hafnium (TEMAH) and the O2 plasma ALD process onto a TiN/Si substrate. The Ni NPs were separately synthesised through a continuous flow chemistry process and dispersed on the dielectric layer between the two stages of preparing the HfO2 layer. The nanodevices’ morphology and composition were analysed with physical characterisation methods and were found to be uniformly dispersed across the sample, within an amorphous HfO2 layer deposited around them. When comparing the resistive switching properties of otherwise identical samples with and without Ni NPs, the ILRS/IHRS ratio rose from around a 4 to 9 at 0.2 V reading voltage, the switching voltage dropped from ~2 V to ~1.5 V, and a distinct increase in the endurance characteristics could be seen with the addition of the nanoparticles.

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“…The memristors with ITO electrodes have low operating voltage and compliance current. [25][26][27] Titanium is abundant on earth and offers the advantage of being inexpensive and nontoxicity. [28] Generally, titanium cation is an attractive carrier suppressor for use in metal oxide semiconductors, due to the fact Memristor, processing data storage, and logic operation all-in-one, is expected to create a new era of neuromorphic computing and digital logic.…”

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confidence: 99%

Power‐Efficient and Highly Uniform BiFeO₃‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect

Xia

Qin

Qiu

2022

Adv Elect Materials

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It is necessary to develop new device to realize the simultaneous storage and compute in one device to overcome von Neumann bottleneck. [2][3][4] Among the various types of NVMs, memristors, as an emerging and promising memory storage device, have attracted widespread attention due to their low cost, high density, long-term data retention, fast operating speed, high endurance, and simple structure. [5,6] It suggests promising applications for information storage and calculation, including as embedded memory in Internet of Things (IoT) and in neuromorphic computing. Oxide-based memristors are being extensively studied as one of the most promising technologies for next-generation non-volatile memory and neuromorphic computing. [7,8] BiFeO 3 (BFO) is an important multiferroic material and attracts extensive attention for its superior performance in resistive characteristics, such as large storage window. [9,10] Nevertheless, most of BFO-based devices with conductive filaments (CFs) formation and rupture have unstable switching processes, correspondingly leading to large cycle-to-cycle variations in resistive switching. [11][12][13][14] High-performance memristors to meet the requirements of highly uniform, large storage windows, and low-power consumption are yet to be developed.Diminution for power consumption, enhancement of uniformity, and expansion of storage window in a definitive and effective way are urgent need and critical challenges, which are also very important for low-power storage and neuromorphic computing applications. Currently, to improve the performance of the memristors, much of work are devoted to changing the novel structures, investigating resistive switching layer and electrode material. [15][16][17][18][19] Several works were reported the utilization of novel multicomponent oxides (MCOs) as RS layers and electrodes to improve memristors' performance. [20][21][22][23][24] MCOs assume a variety of composition-dependent film structures that can be controlled by the addition of a network former, a mobility enhancer, and a carrier suppressor. Among the various MCOs, the indium tin oxide (ITO) as a transparent conductive material has been widely used in the memory and sensor industries. The memristors with ITO electrodes have low operating voltage and compliance current. [25][26][27] Titanium is abundant on earth and offers the advantage of being inexpensive and nontoxicity. [28] Generally, titanium cation is an attractive carrier suppressor for use in metal oxide semiconductors, due to the fact Memristor, processing data storage, and logic operation all-in-one, is expected to create a new era of neuromorphic computing and digital logic. Here, this work demonstrates a BiFeO 3 -based memristor with Ti-doped indium tin oxide as the top electrode material, exhibiting high metrics such as a switching voltage of ≈0.15 V, coefficients of variations of low resistance state of ≈0.46% and a large on/off ratio of ≈10 3 . What is more, the device exhibits a power consumption as low as ≈1.02 µW in set process ...

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Impacts of LaOx Doping on the Performance of ITO/Al2O3/ITO Transparent RRAM Devices

Cited by 8 publications

References 31 publications

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer

Bipolar Resistive Switching in Hafnium Oxide-Based Nanostructures with and without Nickel Nanoparticles

Power‐Efficient and Highly Uniform BiFeO₃‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect

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Impacts of LaOx Doping on the Performance of ITO/Al2O3/ITO Transparent RRAM Devices

Cited by 8 publications

References 31 publications

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer

Bipolar Resistive Switching in Hafnium Oxide-Based Nanostructures with and without Nickel Nanoparticles

Power‐Efficient and Highly Uniform BiFeO3‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect

Contact Info

Product

Resources

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Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer

Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer

Power‐Efficient and Highly Uniform BiFeO₃‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect