Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al<sub>2</sub>O<sub>3</sub>/IZO Multilayer

Park, Jaemin; Huh, Daihong; Son, Seung Hyun; Kim, Won-Joong; Ju, Sucheol; Lee, Heon

doi:10.1002/gch2.202100118

Cited by 7 publications

(4 citation statements)

References 42 publications

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“…In particular, amorphous oxide semiconductors (AOS), such as IGZO or ZTO, have high flexibility, due to a lack of grain boundaries, which enables low-processing temperatures. This facilitates the use of flexible substrates (paper, polyimide, polyethylene naphthalate (poly(ethylene 2,6-naphthalate) (PEN) / polyethylene terephthalate (PET) [24,83,84], providing the means for embedded flexible technologies in wearables and internet-of-things applications. Furthermore, AOS are used in flat-panel display technology for active-matrix driver circuits, making them ideal candidates for future integrated memristor-based hardware for AI.…”

Section: Oxide Semiconductors Oemsmentioning

confidence: 99%

Recent progress in optoelectronic memristors for neuromorphic and in-memory computation

Pereira

Martins

Fortunato

et al. 2023

Neuromorph. Comput. Eng.

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Neuromorphic computing has been gaining momentum for the past decades and has been appointed as the replacer of the outworn technology in conventional computing systems. Artificial neural networks (ANNs) can be composed by memristor crossbars in hardware and perform in-memory computing and storage, in a power, cost and area efficient way. In optoelectronic memristors (OEMs), resistive switching can be controlled by both optical and electronic signals. Using light as synaptic weigh modulator provides a high-speed non-destructive method, not dependent on electrical wires, solving crosstalk issues. In particular, in artificial visual systems, OEMs can act as the artificial retina and combine optical sensing and high-level image processing. Therefore, several efforts have been made by the scientific community into developing OEMs that can meet the demands of each specific application. In this Review, the recent advances on inorganic OEMs are summarized and discussed. The engineering of the device structure provides the means to manipulate RS performance and, thus, a comprehensive analysis is performed regarding the already proposed memristor materials structure and their specific characteristics. Moreover, their potential applications in logic gates, ANNs and, in more detail, on artificial visual systems are also assessed, taking into account the figures of merit described so far.

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Section: Oxide Semiconductors Oemsmentioning

confidence: 99%

Recent progress in optoelectronic memristors for neuromorphic and in-memory computation

Pereira

Martins

Fortunato

et al. 2023

Neuromorph. Comput. Eng.

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“…Despite its low (≥10) I ON /I OFF ) ratio, this device has a lower switching voltage than other organic ReRAM devices, but its endurance of only 30 cycles is a drawback for non-volatile memory applications. Future electronic gadgets, on the other hand, appear to be flexible [15], transparent [15,16], and transient [17]. Yalagala et al reported on the rapid (<4 s) dissolving of a ReRAM device with a MgO-PVP-Ge active layer and Ag and ITO electrodes [17].…”

Section: Transport and Memory Studymentioning

confidence: 99%

Resistive Switching Property of Raw Organic Cow Milk for Memory Application

Dlamini

Vallabhapurapu

2023

Sustainability

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Organic material-based computer memory devices are critical for lowering the amount of electronic waste. Toward this end, we here present the resistive switching property of metal-insulator-metal type devices consisting of active layers made of raw organic cow milk. Our devices were made up of fat-free, medium cream, and full cream raw cow milk active layers sandwiched between indium-doped tin oxide and silver electrodes. These devices were created without the use of heat or electricity, and because they use cow milk as their active layers, they do not pollute the environment. The medium-fat milk film had a higher weight percentage of metallic ions than the fat-free and full-cream milk films, according to energy-dispersive X-ray spectroscopy analysis of the active layers. As a result, electrical characterization and memory studies revealed that conductive filaments driven by a space-charge-limited conduction mechanism were responsible for the “S-type” memory characteristics of the medium-fat milk-based device, with switching at remarkably low VSET=+0.48V and VRESET=−0.25V. Furthermore, with over 30 write/erase cycles, this device demonstrated better non-volatile computer memory device prospects. Hoping conduction-driven conductive filaments, on the other hand, were linked to the behavior of devices that use fat-free and full-cream milk. Overall, our findings show that the fat and ion content of milk plays an important role in the morphology, transport, and switching of these devices.

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“…Amorphous oxide semiconductors (AOSs) are an especially interesting class of materials to be employed as photosensitive layers in such devices . First, AOSs have high flexibility and low-processing temperatures, allowing the use of flexible substrates, which is crucial for internet-of-things (IoT) applications. , Additionally, using AOS in optoelectronic memories allows one to benefit from the mature AOS pixel-driver circuit technology employed in commercial flat-panel displays. This holds great promise for a straightforward integration of AOS optoelectronic memories into the neuromorphic system on panel (SoP) technology.…”

Section: Introductionmentioning

confidence: 99%

Unlocking Neuromorphic Vision: Advancements in IGZO-Based Optoelectronic Memristors with Visible Range Sensitivity

Pereira,

Deuermeier,

Martins

et al. 2024

ACS Appl. Electron. Mater.

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Optoelectronic memristors based on amorphous oxide semiconductors (AOSs) are promising devices for the development of spiking neural network (SNN) hardware in neuromorphic vision sensors. In such devices, the conductance state can be controlled by both optical and electrical stimuli, while the typical persistent photoconductivity (PPC) of AOS materials can be used to emulate synaptic functions. However, due to the large band gap of these materials, sensitivity to visible light (red/ green/blue) is difficult to accomplish, which hinders applications requiring color discrimination. In this work, we report a 4 μm 2 hydrogen-doped (H-doped) indium−gallium-zinc oxide (IGZO) optoelectronic memristor that emulates all of the important rules of SNNs such as short-to long-term memory transition (STM− LTM), paired-pulse facilitation (PPF), spike-time-dependent plasticity (STDP), and learning and forgetting capabilities. By the incorporation of hydrogen gas in the sputtering deposition of IGZO, visible sensitivity was achieved for green and blue wavelengths. Additionally, extremely high light/dark ratios of 179, 93, and 12 are demonstrated for wavelengths of 365, 405, and 505 nm, respectively, due to hydrogen-induced subgap states and device miniaturization. Therefore, the proposed device shows remarkable potential for integration with the pixel circuits of IGZO-based displays with extreme resolution for a true intelligent self-processing display.

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Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer

Cited by 7 publications

References 42 publications

Recent progress in optoelectronic memristors for neuromorphic and in-memory computation

Recent progress in optoelectronic memristors for neuromorphic and in-memory computation

Resistive Switching Property of Raw Organic Cow Milk for Memory Application

Unlocking Neuromorphic Vision: Advancements in IGZO-Based Optoelectronic Memristors with Visible Range Sensitivity

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Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al2O3/IZO Multilayer

Cited by 7 publications

References 42 publications

Recent progress in optoelectronic memristors for neuromorphic and in-memory computation

Recent progress in optoelectronic memristors for neuromorphic and in-memory computation

Resistive Switching Property of Raw Organic Cow Milk for Memory Application

Unlocking Neuromorphic Vision: Advancements in IGZO-Based Optoelectronic Memristors with Visible Range Sensitivity

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Product

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Transparent, Flexible, and Low‐Operating‐Voltage Resistive Switching Memory Based on Al₂O₃/IZO Multilayer