Impacts of hole trapping on the NBTI degradation and recovery in PMOS devices

Lin, Horng−Chih; Lee, D.-Y.; Ou, Shih-Hao; Chien, Cheng Hsing; Huang, Tiao‐Yuan

doi:10.1109/iwgi.2003.159188

Cited by 5 publications

(2 citation statements)

References 2 publications

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“…This effect originated from the fact that the gate edge region is more affected by the fabrication process, such as gate etching [4], which enhance pre-existing damage located near the channel edges. It has been considered by some authors [9] that the generation of interface traps is higher near the gate edge region and some others thought that the oxides traps increases with decreasing channel length [10]. In this work, the NBTI effect has been investigated in P and N-substrate MOS capacitors.…”

Section: Introductionmentioning

confidence: 99%

Investigating the NBTI effect on P- and N-substrate MOS capacitors and p-MOSFET transistors

Benabdelmoumene

Djezzar

Tahi

et al. 2013

2013 25th International Conference on Microelectronics (ICM)

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Using measure/stress/measure (MSM) protocol, Negative bias temperature instability (NBTI) has been investigated on P-and N-substrate MOS capacitors through flat band shift evolution. The same protocol on p-MOSFET's transistors, with different channel lengths, has been also examined through threshold voltage shift evolution. The results have shown that P-substrate MOS capacitors are more affected than N-substrate MOS capacitors. We have suggested that the amphoteric nature of interface traps and the positive nature of the oxide traps could explain this result. In addition, the exponent n is higher in N-substrate than in P-substrate capacitors. Higher the degradation is, lower n is. On the other hand, we have shown that P-doped lightly doped drain (LDD)and source/drain regions of p-MOSFET transistors are more affected than the middle of the channel under NBTI stress conditions. These results point out the influence of the Boron doping on the NBTI degradation. Also, this behavior suggests that the generation mechanism in the edge region is different from that in the channel region.

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Section: Introductionmentioning

confidence: 99%

Investigating the NBTI effect on P- and N-substrate MOS capacitors and p-MOSFET transistors

Benabdelmoumene

Djezzar

Tahi

et al. 2013

2013 25th International Conference on Microelectronics (ICM)

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“…Lin et al also indicate that the re-passivation of interface traps has small contribution to the recovery of threshold voltage shift, while the de-trapping of trapped holes during the relaxation period is the main reason of the recovery [57]. Huard et al [51] also concluded that the recovery of threshold voltage shift is primarily due to detrapping of holes captured by the nitrogen-related centers in the oxide, but not due to the re-passivation of interface traps.…”

Section: 34-2 Deviation From R-d Modelmentioning

confidence: 99%

Characterization of negative bias temperature instability in ultra-thin oxynitride gate P-MOSFETs

Wang¹

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My foremost gratitude goes to my project supervisor, Dr. Ang Diing Shenp. His patient guidance and coaching, his continuous support and encouragement motivate my research in years. Dr. Ang's great passion and devotion to teaching and research activities make him one of the most respectable persons in my life. The circumspection and responsibility he demonstrates through the lectures and academic research are the most valuable wealth I learnt from him. I would like to aknowledge Chartered Semiconductor Manufacturing Ltd. to provide high quality products for my research. I would like to express my sincere thanks to

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