Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

Zhou, Guangnan; Lee, Kwang Hong; Anjum, Dalaver H.; Zhang, Qiang; Zhang, Xixiang; Tan, Chuan Seng; Xia, Guangrui

doi:10.1364/ome.8.001117

Cited by 16 publications

(20 citation statements)

References 47 publications

(47 reference statements)

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“…Due to the interdiffusion, the sharp Ge/Si interfaces changed to thick alloy regions. In the full Ge x range, the effective interdiffusivity of Sample P (̃) is 1.5 to 3 times higher than that of sample A (̃), and ̃ is 1.5 to 2 times higher than that of Sample U (̃) [28].…”

Section: Experiments Design Results and Discussionmentioning

confidence: 93%

Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD

Zhou¹,

Covian²,

Lee³

et al. 2019

Opt. Mater. Express

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Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and photoluminescence were characterized to study the impacts of defect annealing and Si substrate offcut effects on the Ge film quality and most importantly, the light emission properties. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films have a small tensile strain of 0.2%. As-grown P and As-doped Ge films have threading dislocaiton densities from 2.8 × 10 8 to 1.1× 10 9 cm −2 without defect annealing.With thermal cycling, these values reduced to 1-1.5× 10 8 cm −2 . The six degree offcut of the Si substrate was shown to have little impact. In contrast to delta doping, the out-diffusion of dopants has been successfully suppressed to retain the doping concentration upon defect annealing.However, the photoluminescence intensity decreases mostly due to Si-Ge interdiffusion, which also causes a blue-shift in the emission wavelength. Compared to a benckmarking sample from the first Ge laser work doped by delta doping method in 2012, the as-grown P or As-doped Ge films have similar photoluminescence intensity at a 25% doping concentration and smoother surface, which are promising for Ge lasers with better light emission efficiencies.

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Section: Experiments Design Results and Discussionmentioning

confidence: 93%

Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD

Zhou¹,

Covian²,

Lee³

et al. 2019

Opt. Mater. Express

Self Cite

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“…For relaxed SiGe with low defect density and no intentional doping in the temperature range from 700 to 1000 °C, the interdiffusivity at the Ge end is 5 to 6 orders of magnitude larger than that at the Si end [94]. It increases exponentially with compressive strains, and increases with n-type dopants and implant damages [1,4,6,94,95].…”

Section: Background Of Si-ge Interdiffusion Study and Practical Consimentioning

confidence: 98%

“…The third example is on n-Ge/Si lasers. N-type doping with phosphorus (P) enhances the interdiffusion by a factor of 2 to 8 times depending on the germanium molar fraction [5,6]. The photoluminescence of n-Ge was greatly reduced due to the interdiffusion during the defect annealing step ( Fig.…”

Section: Interdiffusion Impacts On Device Performancementioning

confidence: 99%

“…22). [6] to study the doping impact on material quality and Si-Ge interdiffusion. X stands for As, higher boron, lower boron, phosphorus-doped or undoped.…”

Section: Doping Impactsmentioning

confidence: 99%

“…Ref. [6] further investigated Ge-on-Si epitaxial film quality and interdiffusion with three different dopants (P, As and B) and those without intentional doping for the full Ge range (Fig. 23).…”

Section: Doping Impactsmentioning

confidence: 99%

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Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries

Xia

2019

Science Bulletin

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Group IV semiconductor alloys and heterostructures such as SiGe, GeSn, Ge/Si and SiGe:C have been widely used and under extensive research for applications in major microelectronic and photonic devices. In the growth and processing of these materials, nanometer scale interdiffusion happens that are generally undesirable for device performance. With higher Ge molar fractions and higher compressive strains, Si-Ge interdiffusion can be much faster than dopant diffusion. However, Si-Ge interdiffusion behaviors have not been well understood until recent years. Much less studies are available for GeSn. This review starts with basic properties and the applications of major group IV semiconductors, and then reviews the progress made so far on Si-Ge and Ge-Sn interdiffusion behaviors. Theories, experimental methods, design and practical considerations are discussed together with the key findings in this field.

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Evolution of GeSi islands in epitaxial Ge-on-Si during annealing

Zhu,

Zhang,

et al. 2024

Applied Surface Science

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Impacts of doping on epitaxial germanium thin film quality and Si-Ge interdiffusion

Cited by 16 publications

References 47 publications

Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD

Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD

Interdiffusion in group IV semiconductor material systems: applications, research methods and discoveries

Evolution of GeSi islands in epitaxial Ge-on-Si during annealing

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