Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height

Lee, Jae Hyeok; Islam, Abu Bashar Mohammad Hamidul; Kim, Tae Kyoung; Cha, Yu-Jung; Kwak, Joon Seop

doi:10.1364/prj.385249

Cited by 12 publications

(10 citation statements)

References 50 publications

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“…After that, a Ni/Al/Ni (100/500/100 nm) capping layer was deposited on the Ag/p-GaN surface; a Cr/Al/Ni (30/500/100 nm) n-type electrode was deposited on the exposed n-GaN surface; and finally a Ni/Au/Ni/Au (100/600/100/800 nm) capping layer was deposited on the n-electrode, which served as a bonding pad. The detailed structure and fabrication processes used for the 32 × 32 pixelated flip-chip µ-LED arrays are reported elsewhere [29,30]. A fabricated µ-LED with its epitaxial structure is shown in Figure 1i.…”

Section: Device Structure and Measurement Setupmentioning

confidence: 99%

“…The μ-LED arrays with a pixel area of 115 × 115 μm 2 were patterned using a photolithography process, then the mesa structure was etched by ICP in order to expose the n-GaN layer. The ITO treatment process was then performed on the p-GaN surface, which was described in our previous work [29]. A 250 nm-thick p-type Ag reflector was deposited on the ITO treated p-GaN surface.…”

Section: Device Structure and Measurement Setupmentioning

confidence: 99%

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32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

et al. 2021

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This work proposes the use of integrated high-power InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diode (μ-LED) arrays on an AlGaN/GaN-based heterojunction field-effect transistor (HFET), also known as a high electron mobility transistor (HEMT), for various applications: underwater wireless optical communication (UWOC) and smart lighting. Therefore, we demonstrate high-power μ-LED-on-HEMT arrays that consist of 32 × 32 pixelated μ-LED arrays and 32 × 32 pixelated HEMT arrays and that are interconnected by a solder bump bonding technique. Each pixel of the μ-LED arrays emits light in the HEMT on-state. The threshold voltage, the off-state leakage current, and the drain current of the HEMT arrays are −4.6 V, <~1.1 × 10−9 A at gate-to-source voltage (VGS) = −10 V, and 21 mA at VGS = 4 V, respectively. At 12 mA, the forward voltage and the light output power (LOP) of μ-LED arrays are ~4.05 V and ~3.5 mW, respectively. The LOP of the integrated μ-LED-on-HEMT arrays increases from 0 to ~4 mW as the VGS increases from −6 to 4 V at VDD = 10 V. Each pixel of the integrated μ-LEDs exhibits a modulated high LOP at a peak wavelength of ~450 nm, showing their potential as candidates for use in UWOC.

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Section: Device Structure and Measurement Setupmentioning

confidence: 99%

Section: Device Structure and Measurement Setupmentioning

confidence: 99%

32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

et al. 2021

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“…For vertically structured integrated devices, the growth of p-type and n-type GaN interacts with each other due to the difference in growth temperature, making epitaxial growth of vertically structured devices difficult. 26 In this paper, we propose a homogeneous monolithic integration of UVPT with a bipolar junction transistor (BJT) structure and μLED, where the UVPT has the same GaN material and process fabrication system as an LED. Compared with the photodetectors, MSM 27 and APD, 28 the UVPT with the BJT structure has some advantages of a lower operating bias voltage without avalanche noise, high responsiveness, large current gain and relatively simple fabrication process.…”

Section: Introductionmentioning

confidence: 99%

“…In horizontally structured integrated devices, the active region is small and the parasitic effect of metal leads is connected in a series of devices. For vertically structured integrated devices, the growth of p-type and n-type GaN interacts with each other due to the difference in growth temperature, making epitaxial growth of vertically structured devices difficult …”

Section: Introductionmentioning

confidence: 99%

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Su,

Wang,

Zou

et al. 2024

ACS Photonics

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A vertical integration of indium gallium nitride/ gallium nitride (InGaN/GaN)-based microlight-emitting diode (μLED) and GaN ultraviolet bipolar junction transistor (BJT) phototransistor (UVPT), based on the same GaN material and process platform (UVPT-μLED), was proposed. The integrated device is a novel integrated device with light-emitting, detecting, sensing, driving and regulating functions. It can be used as a receiver and transmitter. The light-emission effect of the μLED on UVPT can be regulated by changing the power of an external light. Optical-electrical-optical conversion was conducted with Silvaco TCAD software. Electro-optic modulation characteristics and optical power amplification were attained through a Silvaco TCAD simulation. By optimization of the size and concentration of the device epitaxial, the current gain of the optimized device reaches a maximum of 240. The UVPT-μLED device shows a strong response to small-power light and a stable response to high-power light. The UVPT-μLED chip with a high switching ratio was successfully prepared and used to verify the feasibility of the UVPT-μLED device. The proposed monolithic integrated device not only can be used for traditional displays but also shows great potential in intelligent displays, such as human−computer interactive systems, on-chip optical interconnects, photonic chips and visible-light communications.

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“…It is unlikely that a single communication technology will be able to support these growing data demands. Therefore, future networks must support the coexistence and cooperation of different wireless technologies, including radio-frequency (RF), millimeter-wave, and light-wave technologies 10,11 .…”

Section: Introductionmentioning

confidence: 99%

High-speed visible light communication based on micro-LED: A technology with wide applications in next generation communication

Lu¹,

Lin²,

Guo³

et al. 2022

OES

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The evolution of next-generation cellular networks is aimed at creating faster, more reliable solutions. Both the next-generation 6G network and the metaverse require high transmission speeds. Visible light communication (VLC) is deemed an important ancillary technology to wireless communication. It has shown potential for a wide range of applications in next-generation communication. Micro light-emitting diodes (μLEDs) are ideal light sources for high-speed VLC, owing to their high modulation bandwidths. In this review, an overview of μLEDs for VLC is presented. Methods to improve the modulation bandwidth are discussed in terms of epitaxy optimization, crystal orientation, and active region structure. Moreover, electroluminescent white LEDs, photoluminescent white LEDs based on phosphor or quantum-dot color conversion, and μLED-based detectors for VLC are introduced. Finally, the latest high-speed VLC applications and the application prospects of VLC in 6G are introduced, including underwater VLC and artificial intelligence-based VLC systems.

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Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height

Cited by 12 publications

References 50 publications

32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

High-speed visible light communication based on micro-LED: A technology with wide applications in next generation communication

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