32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

Kim, Tae Kyoung; Islam, Abu Bashar Mohammad Hamidul; Cha, Yu-Jung; Kwak, Joon Seop

doi:10.3390/nano11113045

Cited by 6 publications

(6 citation statements)

References 29 publications

(66 reference statements)

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“…161,166 , OSA Open Access Publishing Agreement; ref. 175,184 , Optical Society of America. where N in and N out are the input and output carrier concentrations, respectively.…”

Section: Theory Of Vlc Applicationsmentioning

confidence: 99%

See 1 more Smart Citation

High-speed visible light communication based on micro-LED: A technology with wide applications in next generation communication

Lu¹,

Lin²,

Guo³

et al. 2022

OES

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The evolution of next-generation cellular networks is aimed at creating faster, more reliable solutions. Both the next-generation 6G network and the metaverse require high transmission speeds. Visible light communication (VLC) is deemed an important ancillary technology to wireless communication. It has shown potential for a wide range of applications in next-generation communication. Micro light-emitting diodes (μLEDs) are ideal light sources for high-speed VLC, owing to their high modulation bandwidths. In this review, an overview of μLEDs for VLC is presented. Methods to improve the modulation bandwidth are discussed in terms of epitaxy optimization, crystal orientation, and active region structure. Moreover, electroluminescent white LEDs, photoluminescent white LEDs based on phosphor or quantum-dot color conversion, and μLED-based detectors for VLC are introduced. Finally, the latest high-speed VLC applications and the application prospects of VLC in 6G are introduced, including underwater VLC and artificial intelligence-based VLC systems.

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“…161,166 , OSA Open Access Publishing Agreement; ref. 175,184 , Optical Society of America. where N in and N out are the input and output carrier concentrations, respectively.…”

Section: Theory Of Vlc Applicationsmentioning

confidence: 99%

“…Recently, Wei et al fabricated a QD blue μLED with a size of 75 μm for UVLC 175 . The growth-interruption method was employed to fabricate QD active region.…”

Section: Underwater Vlc Technologymentioning

confidence: 99%

High-speed visible light communication based on micro-LED: A technology with wide applications in next generation communication

Lu¹,

Lin²,

Guo³

et al. 2022

OES

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show abstract

“…Monolithic heterogeneous integrated devices are attracting considerable interest. Monolithic integration of μLED and photodetector are not only for displays but also have a wide range of applications in on-chip optical interconnections, photonic chips and visible light communications (VLC) . The integration of photodetectors and μLED results in a compact chip structure that integrates receiving and transmitting ends and is needed to satisfy Moore’s Law .…”

Section: Introductionmentioning

confidence: 99%

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

Su,

Wang,

Zou

et al. 2024

ACS Photonics

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A vertical integration of indium gallium nitride/ gallium nitride (InGaN/GaN)-based microlight-emitting diode (μLED) and GaN ultraviolet bipolar junction transistor (BJT) phototransistor (UVPT), based on the same GaN material and process platform (UVPT-μLED), was proposed. The integrated device is a novel integrated device with light-emitting, detecting, sensing, driving and regulating functions. It can be used as a receiver and transmitter. The light-emission effect of the μLED on UVPT can be regulated by changing the power of an external light. Optical-electrical-optical conversion was conducted with Silvaco TCAD software. Electro-optic modulation characteristics and optical power amplification were attained through a Silvaco TCAD simulation. By optimization of the size and concentration of the device epitaxial, the current gain of the optimized device reaches a maximum of 240. The UVPT-μLED device shows a strong response to small-power light and a stable response to high-power light. The UVPT-μLED chip with a high switching ratio was successfully prepared and used to verify the feasibility of the UVPT-μLED device. The proposed monolithic integrated device not only can be used for traditional displays but also shows great potential in intelligent displays, such as human−computer interactive systems, on-chip optical interconnects, photonic chips and visible-light communications.

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“…Based on the outstanding advantages of GaN material performance, the integration of μLED and GaN electronic device driver circuit is expected to realize a highly integrated semiconductor device that combines switching, driving, light-emitting, sensing, detecting and signal transmission functions. [10] In this paper, a homogeneous monolithic integration of BJT and μLED (LET) which it enables optoelectronic co-modulation had been proposed. The BJT has the same GaN material and process fabrication system as the LED.…”

Section: Introductionmentioning

confidence: 99%

P‐11.10: Design and performance simulation study of optoelectronic co‐modulated Full GaN LET

Su,

Chen,

Lin

et al. 2024

Symp Digest of Tech Papers

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Modern society is the development stage of informationization and intelligence, and display is the key factor to realize information exchange and intelligence. Among the many current displays, Micro light‐emitting diode (µLED) display is used as a disruptive next‐generation display. Based on the same GaN material and process platform, we propose the vertical integrated device, where Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) based µLED and GaN bipolar junction transistors (BJT) monolithically integrated vertically on a single GaN chip. The ultraviolet optoelectronic characteristics of µLED on BJT (LET) devices were simulated by using Silvaco TCAD software. By optimizing the size and concentration of the epitaxy layer, the optimized integrated device is obtained with high current gain and strong response to UV light. The LET can be used as both receiver and emitter, which is regulated by changing the light input power or base voltage. This device can be driven by the base voltage and UV light alone, which is a multifunctional integrated device for light emitting, detecting, sensing, driving and regulating.

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32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

Cited by 6 publications

References 29 publications

High-speed visible light communication based on micro-LED: A technology with wide applications in next generation communication

High-speed visible light communication based on micro-LED: A technology with wide applications in next generation communication

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

P‐11.10: Design and performance simulation study of optoelectronic co‐modulated Full GaN LET

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