Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node

Raine, M.; Hubert, G.; Artola, L.; Paillet, Philippe; Girard, Sylvain; Sauvestre, J. E.; Bournel, A.

doi:10.1109/tns.2011.2109966

Cited by 84 publications

(33 citation statements)

References 26 publications

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“…Electron-hole pair's depositions occurring close to the sensitive areas were modeled from the 3D morphology database as a function of the ion energy, type and incidence angle [25].…”

Section: Musca-sepmentioning

confidence: 99%

Sensitivity Characterization of a COTS 90-nm SRAM at Ultra Low Bias Voltage

Clemente

Hubert

Franco

et al. 2017

IEEE Trans. Nucl. Sci.

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Abstract-This paper presents the characterization of the sensitivity to 14-MeV neutrons of a Commercial Off-The-Shelf (COTS) 90-nm Static Random Access Memories (SRAMs) manufactured by Cypress Semiconductor, when biased at ultra low voltage. Firstly, experiments exposing this memory at 14-MeV neutrons, when powering it up at bias voltages ranging from 0.5V to 3.3V, are presented and discussed. These results are in good concordance with theoretical predictions issued by the modeling tool MUSCA-SEP 3 (MUlti-SCAles Single Event Phenomena Predictive Platform). Then, this tool has been used to obtain Soft Error Rate (SER) predictions at different altitudes above the Earth's surface of this device vs. its bias voltage. Finally, the effect of contamination by α particles has also been estimated at said range of bias voltages.

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“…Electron-hole pair's depositions occurring close to the sensitive areas were modeled from the 3D morphology database as a function of the ion energy, type and incidence angle [25].…”

Section: Musca-sepmentioning

confidence: 99%

Sensitivity Characterization of a COTS 90-nm SRAM at Ultra Low Bias Voltage

Clemente

Hubert

Franco

et al. 2017

IEEE Trans. Nucl. Sci.

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“…[15][16][17][18][19] For nuclear reactions, every reaction event can induce a unique energy deposition structure that is not radially symmetric with respect to the primary particle path. As shown in Fig.1, the products of different species and energies from different kinds of reaction channels induced by neutrons move in different directions and have their own tracks.…”

Section: Simulation Detailsmentioning

confidence: 99%

Characteristics of energy deposition from 1-1000 MeV proton and neutron induced nuclear reactions in silicon

Han

Guo

2017

AIP Advances

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The characteristics of the energy deposition of the secondary particles from the proton and neutron induced elastic and nonelastic reactions in silicon over a wide energy range of 1-1000 MeV, which are of great value for the proton and neutron single event effect (SEE) study, are investigated systematically in detail with Geant4 simulations. According to our simulation results, some important issues about the proton and neutron SEEs, including the energy dependence of the SEE cross sections, the equivalence of protons and neutrons in SEEs, the effects of the critical charge on SEEs, the geometric effect of the sensitive volumes, and the role of the elastic scattering mechanism in SEEs, are discussed. And some significant conclusions are tried to be drawn. With our systematic study, a comprehensive and profound understanding about the proton and neutron SEEs is reached from the physical perspective.

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“…Monte Carlo simulated ion track structures have been widely used for the study of Single-Event Effects in electronic components [1][2][3][4][5], in particular using the free open source Geant4 toolkit [6,7]. Recent studies have been confronted with the inherent limits of the Geant4 ionization models for application to very integrated technologies [2,4]: the recommended low energy limit applicability of 250 eV for the production of secondary electrons in the low energy electromagnetic package Livermore models [8] limits the accuracy of the heavy ion track below 10 nm [2], thus preventing the use of these models beyond the 45 nm node [9].…”

Section: Introductionmentioning

confidence: 99%